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16N50C3-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi 16N50C3-VB TO263 is a high voltage, high performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) that uses SJ_Multi-EPI technology with low on-resistance and high drain current capability, suitable for a variety of applications requiring high voltage and high efficiency.
VBsemi 16N50C3-VB TO263 is a high voltage, high performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) that uses SJ_Multi-EPI technology with low on-resistance and high drain current capability, suitable for a variety of applications requiring high voltage and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 16N50C3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: 16N50C3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Modules
#### Power Management
16N50C3-VB TO263 is suitable for applications such as high-voltage switching power supplies (SMPS), inverters, and power factor correction (PFC). These applications require high voltage tolerance and low conduction loss characteristics to improve system efficiency and stability.
#### Industrial Electronics
In the field of industrial control, this MOSFET can be used in motor drivers, high-voltage switches, and power inverters. Its high withstand voltage and high current capabilities enable it to cope with various high-voltage load requirements in industrial environments.
#### Lighting Systems
16N50C3-VB TO263 can also be applied to high-voltage LED drivers and power modules to provide high-efficiency lighting solutions. Its high drain current and low on-resistance help reduce the energy consumption of the system and improve the quality of lighting.
#### Electric Vehicle Charging Pile
In electric vehicle charging piles, this type of MOSFET can be used for power control and battery management systems, with high efficiency and high power handling capabilities to ensure the stability and safety of the charging pile.
In short, VBsemi 16N50C3-VB TO263 MOSFET is suitable for a variety of high-voltage and high-power applications, with excellent performance and stability, and is an ideal choice for industries such as industry, power management, lighting, and electric vehicle charging piles.
#### Power Management
16N50C3-VB TO263 is suitable for applications such as high-voltage switching power supplies (SMPS), inverters, and power factor correction (PFC). These applications require high voltage tolerance and low conduction loss characteristics to improve system efficiency and stability.
#### Industrial Electronics
In the field of industrial control, this MOSFET can be used in motor drivers, high-voltage switches, and power inverters. Its high withstand voltage and high current capabilities enable it to cope with various high-voltage load requirements in industrial environments.
#### Lighting Systems
16N50C3-VB TO263 can also be applied to high-voltage LED drivers and power modules to provide high-efficiency lighting solutions. Its high drain current and low on-resistance help reduce the energy consumption of the system and improve the quality of lighting.
#### Electric Vehicle Charging Pile
In electric vehicle charging piles, this type of MOSFET can be used for power control and battery management systems, with high efficiency and high power handling capabilities to ensure the stability and safety of the charging pile.
In short, VBsemi 16N50C3-VB TO263 MOSFET is suitable for a variety of high-voltage and high-power applications, with excellent performance and stability, and is an ideal choice for industries such as industry, power management, lighting, and electric vehicle charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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