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16CNE8N-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 16CNE8N-VB is a single N-channel MOSFET in a TO263 package, designed to withstand a maximum drain-source voltage (VDS) of 80V. This MOSFET has a gate-source voltage (VGS) of 20V (±) and a threshold voltage (Vth) of 3V. At different VGS, its on-resistance RDS(ON) is 10mΩ (@VGS=4.5V) and 6mΩ (@VGS=10V), and has a drain current (ID) of 120A.
VBsemi's 16CNE8N-VB is a single N-channel MOSFET in a TO263 package, designed to withstand a maximum drain-source voltage (VDS) of 80V. This MOSFET has a gate-source voltage (VGS) of 20V (±) and a threshold voltage (Vth) of 3V. At different VGS, its on-resistance RDS(ON) is 10mΩ (@VGS=4.5V) and 6mΩ (@VGS=10V), and has a drain current (ID) of 120A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage**: 80V
- **Gate-source voltage**: 20V (±)
- **Threshold voltage**: 3V
- **On-resistance**: 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum drain current**: 120A
- **Technology**: Channel
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage**: 80V
- **Gate-source voltage**: 20V (±)
- **Threshold voltage**: 3V
- **On-resistance**: 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum drain current**: 120A
- **Technology**: Channel
Domain and module applications：
### Applicable fields and modules
1. **Power module**: Due to its high drain-source voltage and drain current capability, 16CNE8N-VB is suitable for switching power supplies and inverters in power modules, and can provide reliable power conversion.
2. **Power tools**: In power tools, this MOSFET can be used as a switching element to drive the motor, helping to achieve high-efficiency and high-power power tool design.
3. **Automotive electronics**: In automotive electronic systems, 16CNE8N-VB can be used in the electric drive system of electric vehicles to provide efficient power control and conversion.
4. **Industrial control**: Used in switching power supplies and motor control in industrial control systems, it can achieve stable and reliable power transmission and control.
5. **Power adapter**: In power adapters, this MOSFET can be used in high-efficiency switching power supply design to improve energy utilization and reduce energy loss.
The above is a paragraph-based description of the product introduction, detailed parameter description, and applicable fields and modules of 16CNE8N-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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