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155N3LH6-VB TO252 Product details
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Below are detailed information and application areas of 155N3LH6-VB MOSFET products:
### 155N3LH6-VB Product Introduction
**Model**: 155N3LH6-VB
**Package type**: TO252
**Configuration**: Single N-channel
**Voltage parameters**:
- Drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): 20V (±)
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
**Drain current (ID)**: 120A
**Technology**: Trench
### 155N3LH6-VB Product Introduction
**Model**: 155N3LH6-VB
**Package type**: TO252
**Configuration**: Single N-channel
**Voltage parameters**:
- Drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): 20V (±)
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
**Drain current (ID)**: 120A
**Technology**: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 120A | 3mΩ | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO252, which is a small package suitable for high-density circuit board design and has good heat dissipation performance.
- **Single N-channel configuration**: makes this MOSFET suitable for current control in a single direction.
- **Drain-source voltage (VDS)**: 30V, which means that the device can withstand a maximum voltage of 30V.
- **Gate-source voltage (VGS)**: ±20V, the maximum allowed gate drive voltage range.
- **Threshold voltage (Vth)**: 1.7V, which is the gate turn-on voltage.
- **On-resistance (RDS(ON))**: 3mΩ at a gate drive voltage of 4.5V and 2mΩ at a gate drive voltage of 10V, indicating that this MOSFET has a low on-resistance and is suitable for high-efficiency applications.
- **Drain current (ID)**: 120A, which indicates the maximum current that this MOSFET can withstand.
- **Package type**: TO252, which is a small package suitable for high-density circuit board design and has good heat dissipation performance.
- **Single N-channel configuration**: makes this MOSFET suitable for current control in a single direction.
- **Drain-source voltage (VDS)**: 30V, which means that the device can withstand a maximum voltage of 30V.
- **Gate-source voltage (VGS)**: ±20V, the maximum allowed gate drive voltage range.
- **Threshold voltage (Vth)**: 1.7V, which is the gate turn-on voltage.
- **On-resistance (RDS(ON))**: 3mΩ at a gate drive voltage of 4.5V and 2mΩ at a gate drive voltage of 10V, indicating that this MOSFET has a low on-resistance and is suitable for high-efficiency applications.
- **Drain current (ID)**: 120A, which indicates the maximum current that this MOSFET can withstand.
Domain and module applications：
### Applications and Modules
1. **Power Management Module**: Due to its low on-resistance and high current carrying capacity, 155N3LH6-VB MOSFET is often used in power management modules such as DC-DC converters and switching power supplies to provide efficient power conversion and management.
2. **Power Tools**: Its high current capability makes it suitable for motor control modules of power tools, which can effectively control the start and stop and speed regulation of the motor.
3. **Automotive Electronics**: In the field of automotive electronics, this MOSFET can be applied to battery management systems, charging modules, etc. of electric vehicles to provide efficient and stable power management for cars.
4. **Industrial Control**: In industrial control systems, this MOSFET is suitable for various drive circuits, control circuits and protection circuits to provide reliable current control and protection.
5. **Consumer Electronics**: For example, high-efficiency power management of devices such as laptops, tablets, and smartphones to ensure stable operation of the device under high load.
I hope this information is helpful to you. If you have other questions or need further help, please let me know.
1. **Power Management Module**: Due to its low on-resistance and high current carrying capacity, 155N3LH6-VB MOSFET is often used in power management modules such as DC-DC converters and switching power supplies to provide efficient power conversion and management.
2. **Power Tools**: Its high current capability makes it suitable for motor control modules of power tools, which can effectively control the start and stop and speed regulation of the motor.
3. **Automotive Electronics**: In the field of automotive electronics, this MOSFET can be applied to battery management systems, charging modules, etc. of electric vehicles to provide efficient and stable power management for cars.
4. **Industrial Control**: In industrial control systems, this MOSFET is suitable for various drive circuits, control circuits and protection circuits to provide reliable current control and protection.
5. **Consumer Electronics**: For example, high-efficiency power management of devices such as laptops, tablets, and smartphones to ensure stable operation of the device under high load.
I hope this information is helpful to you. If you have other questions or need further help, please let me know.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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