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14NM65N-VB TO247 Product details
Back to previous pageProduct introduction：
### 14NM65N-VB TO247 Product Introduction
14NM65N-VB is a single N-channel MOSFET launched by VBsemi, using TO247 packaging technology. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 430mΩ. This MOSFET is manufactured using Plannar technology and is suitable for some applications that require high voltage and high power handling capabilities.
14NM65N-VB is a single N-channel MOSFET launched by VBsemi, using TO247 packaging technology. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 430mΩ. This MOSFET is manufactured using Plannar technology and is suitable for some applications that require high voltage and high power handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 14NM65N-VB |
| Package| TO247 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 430mΩ @ VGS=10V |
| Continuous drain current (ID) | 18A |
| Technology| Plannar |
| Parameters| Specifications|
| --- | --- |
| Product model| 14NM65N-VB |
| Package| TO247 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 430mΩ @ VGS=10V |
| Continuous drain current (ID) | 18A |
| Technology| Plannar |
Domain and module applications：
### Applications and module examples
The 14NM65N-VB MOSFET can be used in some applications that require high voltage and high power handling capabilities, such as:
1. **Power inverter**
- Can be used as a key switching element in the power inverter to provide energy conversion and stability of the high-voltage power supply.
2. **Industrial high-voltage power supply**
- Suitable for key switching elements in some industrial high-voltage power supplies, providing stable high-voltage energy conversion.
3. **Electric vehicle charging system**
- Can be used as a key switching element in the electric vehicle charging system to ensure the high-voltage safety and stability of the charging system.
4. **Medical equipment**
- Suitable for high-voltage switching circuits in some medical equipment, providing efficient power control and stability.
From the above examples, we can see that 14NM65N-VB MOSFET has good performance and stability in some high voltage and high power handling applications, and is an important component in many high voltage and high power electronic systems.
The 14NM65N-VB MOSFET can be used in some applications that require high voltage and high power handling capabilities, such as:
1. **Power inverter**
- Can be used as a key switching element in the power inverter to provide energy conversion and stability of the high-voltage power supply.
2. **Industrial high-voltage power supply**
- Suitable for key switching elements in some industrial high-voltage power supplies, providing stable high-voltage energy conversion.
3. **Electric vehicle charging system**
- Can be used as a key switching element in the electric vehicle charging system to ensure the high-voltage safety and stability of the charging system.
4. **Medical equipment**
- Suitable for high-voltage switching circuits in some medical equipment, providing efficient power control and stability.
From the above examples, we can see that 14NM65N-VB MOSFET has good performance and stability in some high voltage and high power handling applications, and is an important component in many high voltage and high power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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