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147N12N-VB TO262 Product details
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### 147N12N-VB TO262 Product Introduction
147N12N-VB is a single N-channel MOSFET launched by VBsemi, using TO262 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. When the gate-source voltage is 4.5V, its on-resistance (RDS(ON)) is 10mΩ, and when the gate-source voltage is 10V, it is 9mΩ. This MOSFET is manufactured using Trench technology, with lower on-resistance and higher current handling capability, suitable for some high-power applications.
147N12N-VB is a single N-channel MOSFET launched by VBsemi, using TO262 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. When the gate-source voltage is 4.5V, its on-resistance (RDS(ON)) is 10mΩ, and when the gate-source voltage is 10V, it is 9mΩ. This MOSFET is manufactured using Trench technology, with lower on-resistance and higher current handling capability, suitable for some high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | 10mΩ | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 147N12N-VB |
| Package| TO262 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V |
| Continuous drain current (ID) | 100A |
| Technology| Trench |
| Parameters| Specifications|
| --- | --- |
| Product model| 147N12N-VB |
| Package| TO262 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V |
| Continuous drain current (ID) | 100A |
| Technology| Trench |
Domain and module applications：
### Application fields and module examples
147N12N-VB MOSFET can be used in some high-power applications, such as:
1. **Power management module**
- Suitable for high-power switching power supplies and DC-DC converters, providing efficient energy conversion and current control.
2. **Motor drive**
- Can be used as a key switching element in the motor drive circuit to provide high-power motor control functions.
3. **Electric vehicle charging system**
- Can be used as a key switching element in the electric vehicle charging system to ensure the high-power safety and stability of the charging system.
4. **Industrial high-frequency power supply**
- Suitable for key switching elements in some industrial high-frequency power supplies, providing high-frequency operation and high-power capabilities.
From the above examples, it can be seen that 147N12N-VB MOSFET has good performance and stability in some high-power applications and is an important component in many high-power electronic systems.
147N12N-VB MOSFET can be used in some high-power applications, such as:
1. **Power management module**
- Suitable for high-power switching power supplies and DC-DC converters, providing efficient energy conversion and current control.
2. **Motor drive**
- Can be used as a key switching element in the motor drive circuit to provide high-power motor control functions.
3. **Electric vehicle charging system**
- Can be used as a key switching element in the electric vehicle charging system to ensure the high-power safety and stability of the charging system.
4. **Industrial high-frequency power supply**
- Suitable for key switching elements in some industrial high-frequency power supplies, providing high-frequency operation and high-power capabilities.
From the above examples, it can be seen that 147N12N-VB MOSFET has good performance and stability in some high-power applications and is an important component in many high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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