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147N03L-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 147N03L-VB is a single N-channel MOSFET using Trench technology with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V. The device has a drain-source on-resistance (RDS(ON)) of 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, a drain current (ID) of 50A and a threshold voltage (Vth) of 1.7V.
VBsemi's 147N03L-VB is a single N-channel MOSFET using Trench technology with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V. The device has a drain-source on-resistance (RDS(ON)) of 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, a drain current (ID) of 50A and a threshold voltage (Vth) of 1.7V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | 18mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description
- **Model**: 147N03L-VB
- **Package**: TO263
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: 20V (±)
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=4.5V: 18mΩ
- When VGS=10V: 12mΩ
- **ID (drain current)**: 50A
- **Technology**: Trench
- **Model**: 147N03L-VB
- **Package**: TO263
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: 20V (±)
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=4.5V: 18mΩ
- When VGS=10V: 12mΩ
- **ID (drain current)**: 50A
- **Technology**: Trench
Domain and module applications：
### Application fields and module examples
1. **Power management**: Due to its low drain-source on-resistance and moderate drain current capacity, 147N03L-VB is suitable for power switches and control circuits in some low-power power management systems.
2. **LED lighting**: In LED lighting systems, MOSFETs are often used as switching elements. 147N03L-VB can be used in LED lighting drivers and controllers to provide stable current and lighting control.
3. **Battery management**: In some applications that require battery management, the device can be used for charge and discharge control and battery protection circuits to ensure battery safety and stability.
4. **Automotive electronics**: In automotive electronic systems, MOSFETs are often used in various control circuits and power switches. 147N03L-VB can be used for power switches and control circuits in automotive electronic systems.
The above fields and modules are only examples, and the actual application depends on the specific design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
