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140N10F4-VB TO220F Product details
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### 140N10F4-VB MOSFET Product Introduction
VBsemi's 140N10F4-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 3.7mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 120A and uses Trench technology for high-power applications.
VBsemi's 140N10F4-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 3.7mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 120A and uses Trench technology for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 3V | 120A | 3.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 140N10F4-VB MOSFET parameter description
- **Model: ** 140N10F4-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 3V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 3.7mΩ
- **Rated current (ID): ** 120A
- **Technology: ** Trench
- **Model: ** 140N10F4-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 3V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 3.7mΩ
- **Rated current (ID): ** 120A
- **Technology: ** Trench
Domain and module applications：
### 140N10F4-VB MOSFET Applications and Module Examples
1. **Power Management:**
140N10F4-VB MOSFET is suitable for various high-power power management applications, such as power inverters, power converters, etc. Its high drain-source voltage and rated current make it an ideal choice in the field of power management, improving the efficiency and reliability of the system.
2. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 140N10F4-VB MOSFET can be used to control the power conversion and switching of the charging pile. Its high drain-source voltage and rated current ensure the high efficiency and reliability of the charging pile.
3. **Industrial Electrical Equipment:**
In industrial electrical equipment, 140N10F4-VB MOSFET can be used in various high-power electrical control systems. Its high drain-source voltage and low on-resistance ensure the high efficiency and reliability of electrical equipment.
4. **Solar Inverter: **
In solar inverters, the 140N10F4-VB MOSFET can be used to control power conversion and storage from solar panels. Its high drain-source voltage and rated current enable it to meet the power requirements of the inverter, improving the efficiency and reliability of the solar system.
Through these application areas and module examples, the 140N10F4-VB MOSFET demonstrates its applicability in high-power demand scenarios, becoming an indispensable core component in various electronic systems.
1. **Power Management:**
140N10F4-VB MOSFET is suitable for various high-power power management applications, such as power inverters, power converters, etc. Its high drain-source voltage and rated current make it an ideal choice in the field of power management, improving the efficiency and reliability of the system.
2. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 140N10F4-VB MOSFET can be used to control the power conversion and switching of the charging pile. Its high drain-source voltage and rated current ensure the high efficiency and reliability of the charging pile.
3. **Industrial Electrical Equipment:**
In industrial electrical equipment, 140N10F4-VB MOSFET can be used in various high-power electrical control systems. Its high drain-source voltage and low on-resistance ensure the high efficiency and reliability of electrical equipment.
4. **Solar Inverter: **
In solar inverters, the 140N10F4-VB MOSFET can be used to control power conversion and storage from solar panels. Its high drain-source voltage and rated current enable it to meet the power requirements of the inverter, improving the efficiency and reliability of the solar system.
Through these application areas and module examples, the 140N10F4-VB MOSFET demonstrates its applicability in high-power demand scenarios, becoming an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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