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13NM60N-VB TO251 Product details
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### Product Introduction:
VBsemi's MOSFET product 13NM60N-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V and a drain current (ID) capability of 11A. The product is provided in a TO251 package and is suitable for power electronics applications that require medium voltage and current.
VBsemi's MOSFET product 13NM60N-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V and a drain current (ID) capability of 11A. The product is provided in a TO251 package and is suitable for power electronics applications that require medium voltage and current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Parameter Description:
- Package: TO251
- Configuration: Single N-channel
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 380mΩ @ VGS=10V
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
- Package: TO251
- Configuration: Single N-channel
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 380mΩ @ VGS=10V
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
Domain and module applications：
### Application fields and modules:
1. **Power module**: 13NM60N-VB is suitable for switching power modules such as DC-DC converters and AC-DC converters to provide stable power output.
2. **Electric vehicle**: In electric vehicles, this MOSFET can be used in modules such as motor drivers and battery management systems to provide high efficiency and reliability.
3. **Industrial control**: In industrial control equipment, this MOSFET can be used in modules such as inverters and power management units to provide reliable power control and conversion.
4. **Battery management**: 13NM60N-VB can be used in modules such as battery charge and discharge control and protection to support high power density and energy efficiency.
5. **Lighting application**: Suitable for LED drivers and other lighting power supplies, capable of providing medium-power power conversion and reliability.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 13NM60N-VB MOSFET product.
1. **Power module**: 13NM60N-VB is suitable for switching power modules such as DC-DC converters and AC-DC converters to provide stable power output.
2. **Electric vehicle**: In electric vehicles, this MOSFET can be used in modules such as motor drivers and battery management systems to provide high efficiency and reliability.
3. **Industrial control**: In industrial control equipment, this MOSFET can be used in modules such as inverters and power management units to provide reliable power control and conversion.
4. **Battery management**: 13NM60N-VB can be used in modules such as battery charge and discharge control and protection to support high power density and energy efficiency.
5. **Lighting application**: Suitable for LED drivers and other lighting power supplies, capable of providing medium-power power conversion and reliability.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 13NM60N-VB MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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