中文
English
13N95K3-VB TO220F Product details
Back to previous pageProduct introduction：
### 13N95K3-VB MOSFET Product Introduction
VBsemi's 13N95K3-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 30V (±V). Its on-state resistance (RDS(ON)) is 560mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 9A and uses SJ_Multi-EPI technology, making it suitable for medium-power applications.
VBsemi's 13N95K3-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 30V (±V). Its on-state resistance (RDS(ON)) is 560mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 9A and uses SJ_Multi-EPI technology, making it suitable for medium-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | 560mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 13N95K3-VB MOSFET parameter description
- **Model: ** 13N95K3-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 900V
- **Gate-source voltage (VGS): ** 30 (±V)
- **Threshold voltage (Vth): ** 3.5V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 560mΩ
- **Rated current (ID): ** 9A
- **Technology: ** SJ_Multi-EPI
- **Model: ** 13N95K3-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 900V
- **Gate-source voltage (VGS): ** 30 (±V)
- **Threshold voltage (Vth): ** 3.5V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 560mΩ
- **Rated current (ID): ** 9A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### 13N95K3-VB MOSFET Applications and Module Examples
1. **Power Converter:**
13N95K3-VB MOSFET is suitable for various medium-power power converters, such as LED drivers, industrial power supplies, etc. Its high drain-source voltage and rated current make it an ideal choice in power converters, improving the efficiency and reliability of the converter.
2. **Lighting Application:**
In lighting applications, 13N95K3-VB MOSFET can be used for LED lighting drivers and power control. Its high drain-source voltage and low on-resistance ensure high efficiency and long life of LED lighting systems.
3. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 13N95K3-VB MOSFET can be used to control the power conversion and switching of the charging pile. Its high drain-source voltage and rated current ensure high efficiency and reliability of the charging pile.
4. **Electric Vehicle Power Inverter:**
In electric vehicle power inverters, 13N95K3-VB MOSFET can be used to control the power system of electric vehicles. Its high drain-source voltage and rated current enable it to meet the power requirements of the power inverter, improving the performance and efficiency of electric vehicles.
Through these application areas and module examples, 13N95K3-VB MOSFET demonstrates its applicability in medium-power demand scenarios and becomes an indispensable core component in various electronic systems.
1. **Power Converter:**
13N95K3-VB MOSFET is suitable for various medium-power power converters, such as LED drivers, industrial power supplies, etc. Its high drain-source voltage and rated current make it an ideal choice in power converters, improving the efficiency and reliability of the converter.
2. **Lighting Application:**
In lighting applications, 13N95K3-VB MOSFET can be used for LED lighting drivers and power control. Its high drain-source voltage and low on-resistance ensure high efficiency and long life of LED lighting systems.
3. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 13N95K3-VB MOSFET can be used to control the power conversion and switching of the charging pile. Its high drain-source voltage and rated current ensure high efficiency and reliability of the charging pile.
4. **Electric Vehicle Power Inverter:**
In electric vehicle power inverters, 13N95K3-VB MOSFET can be used to control the power system of electric vehicles. Its high drain-source voltage and rated current enable it to meet the power requirements of the power inverter, improving the performance and efficiency of electric vehicles.
Through these application areas and module examples, 13N95K3-VB MOSFET demonstrates its applicability in medium-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
