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13N60M2-VB Product details
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### Product Introduction
VBsemi's 13N60M2-VB is a single N-channel MOSFET using SJ_Multi-EPI technology with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device has a drain-source on-resistance (RDS(ON)) of 370mΩ at VGS=10V, a drain current (ID) of 11A and a threshold voltage (Vth) of 3.5V.
VBsemi's 13N60M2-VB is a single N-channel MOSFET using SJ_Multi-EPI technology with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. The device has a drain-source on-resistance (RDS(ON)) of 370mΩ at VGS=10V, a drain current (ID) of 11A and a threshold voltage (Vth) of 3.5V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description
- **Model**: 13N60M2-VB
- **Package**: TO252
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 370mΩ
- **ID (drain current)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: 13N60M2-VB
- **Package**: TO252
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 370mΩ
- **ID (drain current)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
1. **Power inverter**: Due to its high drain-source voltage and moderate drain current capacity, 13N60M2-VB is suitable for power switches and control circuits in some inverters.
2. **Electric vehicle motor drive**: In the motor drive system of electric vehicles, MOSFET is usually used to control the start and stop of the motor and speed regulation. 13N60M2-VB can be used in the motor driver of electric vehicles to provide high-efficiency power control.
3. **LED lighting**: Due to its high drain-source voltage and moderate on-resistance, 13N60M2-VB is suitable for LED lighting drivers and controllers to provide stable current and lighting control.
4. **Power management**: In some low-power power management systems, the device can be used for power switches and control circuits to improve the energy conversion efficiency of the system.
5. **Industrial control**: In the field of industrial control, MOSFET is usually used in various control circuits and power switches. 13N60M2-VB can be used for power switches and control circuits in industrial control systems.
The above fields and modules are only examples, and the actual application depends on the specific design requirements and environment.
1. **Power inverter**: Due to its high drain-source voltage and moderate drain current capacity, 13N60M2-VB is suitable for power switches and control circuits in some inverters.
2. **Electric vehicle motor drive**: In the motor drive system of electric vehicles, MOSFET is usually used to control the start and stop of the motor and speed regulation. 13N60M2-VB can be used in the motor driver of electric vehicles to provide high-efficiency power control.
3. **LED lighting**: Due to its high drain-source voltage and moderate on-resistance, 13N60M2-VB is suitable for LED lighting drivers and controllers to provide stable current and lighting control.
4. **Power management**: In some low-power power management systems, the device can be used for power switches and control circuits to improve the energy conversion efficiency of the system.
5. **Industrial control**: In the field of industrial control, MOSFET is usually used in various control circuits and power switches. 13N60M2-VB can be used for power switches and control circuits in industrial control systems.
The above fields and modules are only examples, and the actual application depends on the specific design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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