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13N50W-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's MOSFET product 13N50W-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V and a drain current (ID) capability of 11A. The product is provided in a TO3P package and is suitable for power electronics applications that require higher voltage and current.
VBsemi's MOSFET product 13N50W-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 600V and a drain current (ID) capability of 11A. The product is provided in a TO3P package and is suitable for power electronics applications that require higher voltage and current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Parameter Description:
- Package: TO3P
- Configuration: Single N-channel
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 380mΩ @ VGS=10V
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
- Package: TO3P
- Configuration: Single N-channel
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 380mΩ @ VGS=10V
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
Domain and module applications：
### Application fields and modules:
1. **Power module**: 13N50W-VB is suitable for high-voltage and high-current switching power modules, such as DC-DC converters and AC-DC converters, to provide stable and reliable power output.
2. **Industrial control**: In industrial control equipment, this MOSFET can be used in modules such as inverters and power management units to provide reliable power control and conversion.
3. **Electric vehicles**: In electric vehicles, this MOSFET can be used in modules such as motor drivers and battery management systems to provide high efficiency and reliability.
4. **Battery management**: 13N50W-VB can be used in modules such as battery charge and discharge control and protection, supporting high power density and energy efficiency.
5. **Photovoltaic inverter**: Suitable for solar photovoltaic inverters to help convert solar energy into usable electrical energy.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 13N50W-VB MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
