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132418E-VB Product details
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### 132418E-VB Product Introduction
132418E-VB is a dual N+N channel MOSFET launched by VBsemi, using SOT23-6 packaging technology. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 0.5~1.5V. When the gate-source voltage is 2.5V and 4.5V, its on-resistance (RDS(ON)) is 28mΩ and 24mΩ respectively. This MOSFET is manufactured using Trench technology and is suitable for some low-power applications.
132418E-VB is a dual N+N channel MOSFET launched by VBsemi, using SOT23-6 packaging technology. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 0.5~1.5V. When the gate-source voltage is 2.5V and 4.5V, its on-resistance (RDS(ON)) is 28mΩ and 24mΩ respectively. This MOSFET is manufactured using Trench technology and is suitable for some low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 132418E-VB |
| Package| SOT23-6 |
| Configuration| Dual N+N channel |
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V |
| Continuous drain current (ID) | 6A |
| Technology| Trench |
| Parameters| Specifications|
| --- | --- |
| Product model| 132418E-VB |
| Package| SOT23-6 |
| Configuration| Dual N+N channel |
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V |
| Continuous drain current (ID) | 6A |
| Technology| Trench |
Domain and module applications：
### Applications and module examples
132418E-VB This MOSFET can be used in some low-power applications, such as:
1. **Mobile phone charging management**
- Applicable to power switch and current control in mobile phone charging management circuit to ensure charging efficiency and safety.
2. **Portable electronic devices**
- Used as power switch and circuit controller in some portable electronic devices, such as tablet computers, portable audio, etc.
3. **Battery management system**
- Applicable to charge and discharge control and current management in battery management system to ensure battery safety and stability.
4. **Medical equipment**
- Used as power switch and circuit controller in some low-power medical equipment, such as portable medical instruments.
5. **Automotive electronics**
- Can be used as power switch and circuit controller in automotive electronic systems to provide efficient energy conversion and current control.
From the above examples, we can see that 132418E-VB MOSFET has good performance and stability in some low-power applications and is an important component in many electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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