中文
English
12P10L-TQ2-R-VB TO263 Product details
Back to previous pageProduct introduction：
### 12P10L-TQ2-R-VB MOSFET Product Introduction
VBsemi's 12P10L-TQ2-R-VB is a single P-channel power MOSFET in TO263 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 240mΩ at a gate-source voltage of 4.5V and 200mΩ at 10V. The device has a rated current (ID) of -12A and uses Trench technology, making it suitable for medium-power applications.
VBsemi's 12P10L-TQ2-R-VB is a single P-channel power MOSFET in TO263 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 240mΩ at a gate-source voltage of 4.5V and 200mΩ at 10V. The device has a rated current (ID) of -12A and uses Trench technology, making it suitable for medium-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -12A | 240mΩ | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### 12P10L-TQ2-R-VB MOSFET parameter description
- **Model: ** 12P10L-TQ2-R-VB
- **Package: ** TO263
- **Configuration: ** Single P-channel
- **Drain-source voltage (VDS): ** -100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** -2V
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 240mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 200mΩ
- **Rated current (ID): ** -12A
- **Technology: ** Trench
Domain and module applications：
### 12P10L-TQ2-R-VB MOSFET Applications and Module Examples
1. **Power Inverter:**
12P10L-TQ2-R-VB MOSFET is suitable for medium power inverter modules, such as solar inverters and wind inverters. Its moderate rated current and drain-source voltage enable it to provide reliable power conversion in the inverter.
2. **Automotive Electronic Systems:**
In automotive electronic systems, 12P10L-TQ2-R-VB MOSFET can be used to control the vehicle's power management and drive systems. Its moderate power characteristics enable it to meet the power requirements of vehicle electronic devices.
3. **Power Switch:**
In various power switch applications, 12P10L-TQ2-R-VB MOSFET can be used to control the switching and power management of the power supply. Its moderate power characteristics and low on-resistance ensure stable operation of the equipment.
4. **Power tools: **
In power tools, 12P10L-TQ2-R-VB MOSFET can be used to control the power supply and drive system of power tools. Its moderate power characteristics enable it to meet the power requirements of power tools, improving the efficiency and reliability of the tools.
Through these application areas and module examples, 12P10L-TQ2-R-VB MOSFET demonstrates its applicability in medium-power demand scenarios and becomes an indispensable core component in various electronic systems.
1. **Power Inverter:**
12P10L-TQ2-R-VB MOSFET is suitable for medium power inverter modules, such as solar inverters and wind inverters. Its moderate rated current and drain-source voltage enable it to provide reliable power conversion in the inverter.
2. **Automotive Electronic Systems:**
In automotive electronic systems, 12P10L-TQ2-R-VB MOSFET can be used to control the vehicle's power management and drive systems. Its moderate power characteristics enable it to meet the power requirements of vehicle electronic devices.
3. **Power Switch:**
In various power switch applications, 12P10L-TQ2-R-VB MOSFET can be used to control the switching and power management of the power supply. Its moderate power characteristics and low on-resistance ensure stable operation of the equipment.
4. **Power tools: **
In power tools, 12P10L-TQ2-R-VB MOSFET can be used to control the power supply and drive system of power tools. Its moderate power characteristics enable it to meet the power requirements of power tools, improving the efficiency and reliability of the tools.
Through these application areas and module examples, 12P10L-TQ2-R-VB MOSFET demonstrates its applicability in medium-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
