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12NM50ND-VB TO252 Product details
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### 12NM50ND-VB TO252 Product Introduction
12NM50ND-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 370mΩ. This MOSFET is manufactured using SJ_Multi-EPI technology, with low on-resistance and moderate current handling capability, suitable for some medium-power applications.
12NM50ND-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 370mΩ. This MOSFET is manufactured using SJ_Multi-EPI technology, with low on-resistance and moderate current handling capability, suitable for some medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 12NM50ND-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 370mΩ @ VGS=10V |
| Continuous drain current (ID) | 11A |
| Technology| SJ_Multi-EPI |
| Parameters| Specifications|
| --- | --- |
| Product model| 12NM50ND-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 370mΩ @ VGS=10V |
| Continuous drain current (ID) | 11A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
### Applications and module examples
12NM50ND-VB This MOSFET can be used in some medium-power applications, such as:
1. **Power Management Module**
- Suitable for medium-power switching power supplies and DC-DC converters, providing efficient energy conversion and current control.
2. **Industrial Control**
- Suitable for switching circuits and load switches in some medium-power industrial control systems, providing high-frequency operation and medium current handling capabilities.
3. **Power Tools**
- In some medium-power power tools, such as electric drills, electric saws, etc., it provides reliable power tool performance through its moderate current handling capacity and stability.
4. **Solar Inverter**
- Can be used as a key switching element in a solar photovoltaic inverter to ensure efficient and stable operation of the solar system.
5. **Electric vehicle charging system**
- It can be used as a key switch component in the electric vehicle charging system to ensure the safety and stability of the charging system.
From the above examples, it can be seen that 12NM50ND-VB MOSFET has good performance and stability in some medium-power applications and is an important component in many electronic systems.
12NM50ND-VB This MOSFET can be used in some medium-power applications, such as:
1. **Power Management Module**
- Suitable for medium-power switching power supplies and DC-DC converters, providing efficient energy conversion and current control.
2. **Industrial Control**
- Suitable for switching circuits and load switches in some medium-power industrial control systems, providing high-frequency operation and medium current handling capabilities.
3. **Power Tools**
- In some medium-power power tools, such as electric drills, electric saws, etc., it provides reliable power tool performance through its moderate current handling capacity and stability.
4. **Solar Inverter**
- Can be used as a key switching element in a solar photovoltaic inverter to ensure efficient and stable operation of the solar system.
5. **Electric vehicle charging system**
- It can be used as a key switch component in the electric vehicle charging system to ensure the safety and stability of the charging system.
From the above examples, it can be seen that 12NM50ND-VB MOSFET has good performance and stability in some medium-power applications and is an important component in many electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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