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12N90L-TF1-T-VB Product details
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### Product Introduction:
VBsemi's MOSFET product 12N90L-TF1-T-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 900V and a drain current (ID) capability of 9A. This product is provided in a TO220F package and is suitable for power electronics applications that require high voltage and medium current.
VBsemi's MOSFET product 12N90L-TF1-T-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 900V and a drain current (ID) capability of 9A. This product is provided in a TO220F package and is suitable for power electronics applications that require high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | 560mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description:
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 560mΩ @ VGS=10V
- Drain current (ID): 9A
- Technology: SJ_Multi-EPI
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 560mΩ @ VGS=10V
- Drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications：
### Application fields and modules:
1. **Power module**: Due to its high drain voltage and moderate drain current capability, 12N90L-TF1-T-VB is suitable for high-performance switching power modules such as DC-DC converters and AC-DC converters.
2. **Electric vehicle**: In electric vehicles, this MOSFET can be used in modules such as motor drivers and battery management systems to provide high efficiency and reliability.
3. **Industrial control**: In industrial control equipment, this MOSFET can be used in modules such as inverters and power management units to provide reliable power control and conversion.
4. **Battery management**: In battery management systems that require medium power density, 12N90L-TF1-T-VB can be used in modules such as battery charge and discharge control and protection to support high power density and energy efficiency.
5. **Solar Inverter**: This MOSFET can also be used in solar inverters to convert the DC power generated by solar panels into AC power.
The above is the product introduction, detailed parameter description, applicable fields and module introduction of the 12N90L-TF1-T-VB MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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