VBN1206N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 20(±V) | 3V | 35A | 50(mΩ) | Trench |
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 50
- Maximum drain current (ID): 35A
- Technology: Trench
-Package:TO262
Domain and module applications:
1. Power module: VBN1206N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while low drain-source resistance reduces power consumption and losses.
2. Electric vehicle module: In the field of electric vehicles, VBN1206N can be used for motor drive, battery management and charging management modules of electric vehicles. Its high voltage and current capabilities can meet the high power and performance needs of electric vehicles, while the TO262 package can provide good heat dissipation performance.
3. Industrial control module: In the field of industrial control, VBN1206N can be used for power management, drive control and power regulation modules in industrial control systems. Its reliable performance and high power processing capabilities make it an important part of industrial control modules, improving system reliability and efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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