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12N10-VB TO252 Product details
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### 12N10-VB MOSFET Product Introduction
VBsemi's 12N10-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 114mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 15A and uses Trench technology, which has the characteristics of low on-resistance and high power handling capability, making it suitable for medium-power applications.
VBsemi's 12N10-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 114mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 15A and uses Trench technology, which has the characteristics of low on-resistance and high power handling capability, making it suitable for medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 12N10-VB MOSFET parameter description
- **Model: ** 12N10-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 1.8V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 114mΩ
- **Rated current (ID): ** 15A
- **Technology: ** Trench
- **Model: ** 12N10-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 1.8V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 114mΩ
- **Rated current (ID): ** 15A
- **Technology: ** Trench
Domain and module applications：
### 12N10-VB MOSFET Application Fields and Module Examples
1. **Power Management:**
12N10-VB MOSFET is suitable for medium-power power management modules, such as LED lighting power supplies and small power tool power supplies. Its low on-resistance and moderate rated current enable it to handle medium-power power management needs.
2. **Industrial Control:**
In the field of industrial control, 12N10-VB MOSFET can be used to control the power supply and drive system of various medium-power devices. Its moderate rated current and low on-resistance ensure the stable operation of the equipment.
3. **Household Appliances:**
In household appliances, such as air conditioners and refrigerators, 12N10-VB MOSFET can be used to control the switching and power management of appliances. Its medium power characteristics enable it to meet the power requirements of household appliances.
4. **Automotive Electronics:**
In cars and other vehicles, 12N10-VB MOSFET can be used to control the power and switching of on-board electronic devices. Its moderate power characteristics enable it to adapt to the power requirements of vehicle electronics.
Through these application areas and module examples, 12N10-VB MOSFET demonstrates its applicability in medium-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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