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12CNE8N-VB Product details
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### Product Introduction
VBsemi's 12CNE8N-VB is a single N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V. The device has a drain current (ID) rating of 120A and is manufactured using trench technology.
VBsemi's 12CNE8N-VB is a single N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V. The device has a drain current (ID) rating of 120A and is manufactured using trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description
- **Packaging**: TO263
- **Channel Type**: Single N-channel
- **VDS (drain-source voltage)**: 80V
- **VGS (gate-source voltage)**: 20V (±V)
- **Threshold voltage (Vth)**: 3V
- **RDS(ON) (on-resistance)**: 10mΩ @ VGS=4.5V; 6mΩ @ VGS=10V
- **ID (drain current)**: 120A
- **Technology**: Channel
- **Packaging**: TO263
- **Channel Type**: Single N-channel
- **VDS (drain-source voltage)**: 80V
- **VGS (gate-source voltage)**: 20V (±V)
- **Threshold voltage (Vth)**: 3V
- **RDS(ON) (on-resistance)**: 10mΩ @ VGS=4.5V; 6mΩ @ VGS=10V
- **ID (drain current)**: 120A
- **Technology**: Channel
Domain and module applications：
### Application fields and module examples
1. **Power management**: 12CNE8N-VB is ideal for high-performance power management modules, such as server power supplies and high-efficiency power supplies, which require high current and low on-resistance to ensure efficient power conversion and stable output.
2. **Electric vehicles**: In electric and hybrid vehicles, the device can be used as a switching device for motor drive to achieve efficient power transmission and motor control, improving the power and endurance of the vehicle.
3. **Industrial automation**: Suitable for power management and control systems in industrial automation equipment, which usually require high-power MOSFETs for reliable and efficient current control.
4. **Solar power systems**: In solar power generation systems, this MOSFET can be used in inverters and battery management systems to help convert DC power collected by solar panels into AC power and manage the battery charging and discharging process.
5. **Motor control**: Suitable for high-power motor control systems, such as industrial motor drives and large household appliances, which require high-current MOSFETs for precise motor speed and torque control.
The above are just some common application areas and modules. There may be other areas and modules in actual applications.
1. **Power management**: 12CNE8N-VB is ideal for high-performance power management modules, such as server power supplies and high-efficiency power supplies, which require high current and low on-resistance to ensure efficient power conversion and stable output.
2. **Electric vehicles**: In electric and hybrid vehicles, the device can be used as a switching device for motor drive to achieve efficient power transmission and motor control, improving the power and endurance of the vehicle.
3. **Industrial automation**: Suitable for power management and control systems in industrial automation equipment, which usually require high-power MOSFETs for reliable and efficient current control.
4. **Solar power systems**: In solar power generation systems, this MOSFET can be used in inverters and battery management systems to help convert DC power collected by solar panels into AC power and manage the battery charging and discharging process.
5. **Motor control**: Suitable for high-power motor control systems, such as industrial motor drives and large household appliances, which require high-current MOSFETs for precise motor speed and torque control.
The above are just some common application areas and modules. There may be other areas and modules in actual applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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