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12CN10N-VB Product details
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### 12CN10N-VB MOSFET Product Introduction
VBsemi's 12CN10N-VB is a single N-channel power MOSFET in TO263 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 23mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 100A and uses Trench technology. It has the characteristics of low on-resistance and high power handling capability, making it suitable for high-power applications.
VBsemi's 12CN10N-VB is a single N-channel power MOSFET in TO263 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 23mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 100A and uses Trench technology. It has the characteristics of low on-resistance and high power handling capability, making it suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | 23mΩ | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 12CN10N-VB MOSFET parameter description
- **Model: ** 12CN10N-VB
- **Package: ** TO263
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 2.5V
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 23mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 10mΩ
- **Rated current (ID): ** 100A
- **Technology: ** Trench
- **Model: ** 12CN10N-VB
- **Package: ** TO263
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 2.5V
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 23mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 10mΩ
- **Rated current (ID): ** 100A
- **Technology: ** Trench
Domain and module applications：
### 12CN10N-VB MOSFET Application Fields and Module Examples
1. **Power Management:**
12CN10N-VB MOSFET is suitable for high-power power management modules, such as power supplies for data centers and power supplies for communication equipment. Its low on-resistance and high power handling capability enable it to handle high-power power management needs.
2. **Electric Vehicles:**
In electric vehicles, 12CN10N-VB MOSFET can be used to control the motor of electric vehicles. Its high rated current and low on-resistance enable it to efficiently control the drive system of electric vehicles and ensure the stable operation of the vehicle.
3. **Industrial Automation:**
In the field of industrial automation, 12CN10N-VB MOSFET can be used to control the power supply and drive system of various industrial equipment. Its high power handling capability and low on-resistance ensure the stable operation of industrial equipment and improve production efficiency.
4. **Solar Inverter: **
In solar inverters, 12CN10N-VB MOSFET can be used to control the switch of the inverter. Its high drain-source voltage and low on-resistance enable it to provide reliable power conversion in solar systems, improving the efficiency and reliability of solar systems.
Through these application areas and module examples, 12CN10N-VB MOSFET demonstrates its applicability in high-power demand scenarios and becomes an indispensable core component in various electronic systems.
1. **Power Management:**
12CN10N-VB MOSFET is suitable for high-power power management modules, such as power supplies for data centers and power supplies for communication equipment. Its low on-resistance and high power handling capability enable it to handle high-power power management needs.
2. **Electric Vehicles:**
In electric vehicles, 12CN10N-VB MOSFET can be used to control the motor of electric vehicles. Its high rated current and low on-resistance enable it to efficiently control the drive system of electric vehicles and ensure the stable operation of the vehicle.
3. **Industrial Automation:**
In the field of industrial automation, 12CN10N-VB MOSFET can be used to control the power supply and drive system of various industrial equipment. Its high power handling capability and low on-resistance ensure the stable operation of industrial equipment and improve production efficiency.
4. **Solar Inverter: **
In solar inverters, 12CN10N-VB MOSFET can be used to control the switch of the inverter. Its high drain-source voltage and low on-resistance enable it to provide reliable power conversion in solar systems, improving the efficiency and reliability of solar systems.
Through these application areas and module examples, 12CN10N-VB MOSFET demonstrates its applicability in high-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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