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12CN10N-VB TO263 Product details
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### 12CN10N-VB TO263 Product Introduction
**Product Overview**:
12CN10N-VB is a high-performance single N-channel power MOSFET manufactured with Trench technology, featuring low on-resistance and high current handling capability. This MOSFET is packaged in TO263 and is suitable for medium-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Medium voltage handling capability**: VDS is 100V, suitable for medium-voltage applications.
- **High gate voltage**: VGS is ±20V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 2.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 23mΩ@VGS=4.5V, 10mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High current capability**: ID is 100A, suitable for high current applications.
**Product Overview**:
12CN10N-VB is a high-performance single N-channel power MOSFET manufactured with Trench technology, featuring low on-resistance and high current handling capability. This MOSFET is packaged in TO263 and is suitable for medium-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Medium voltage handling capability**: VDS is 100V, suitable for medium-voltage applications.
- **High gate voltage**: VGS is ±20V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 2.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 23mΩ@VGS=4.5V, 10mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High current capability**: ID is 100A, suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | 23mΩ | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 12CN10N-VB TO263 Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 23mΩ@VGS=4.5V, 10mΩ@VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 23mΩ@VGS=4.5V, 10mΩ@VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
### Applications and modules
**Power management module**:
In medium voltage power management modules, 12CN10N-VB can be used as a power switch element to achieve high-efficiency power conversion and stable voltage output. Its low on-resistance and high current capability give it excellent performance in power management modules.
**Automotive electronics**:
In automotive electronic systems, this MOSFET can be used as a power switch element in motor drivers to control the start and stop and speed regulation of motors. Its high current capability and low on-resistance help improve the performance and reliability of automotive electronic systems.
**DC-DC converter**:
In DC-DC converters, 12CN10N-VB can be used as a switch tube to achieve voltage conversion of direct current. Its low on-resistance and high current capability help improve the efficiency and stability of DC-DC converters.
**Battery management system**:
In battery management systems, this MOSFET can be used for battery protection circuits and charge and discharge control. Its low on-resistance and high current capability help improve the efficiency and safety of battery management systems.
**Communication equipment**:
In communication equipment, this MOSFET can be used in power amplifiers and power management modules. Its high efficiency and low power consumption characteristics help improve the signal quality and energy efficiency of communication equipment.
Through the above application examples, it can be seen that 12CN10N-VB MOSFET has a wide range of application prospects in various fields and modules, and can meet the high performance and high reliability requirements in the medium voltage range.
**Power management module**:
In medium voltage power management modules, 12CN10N-VB can be used as a power switch element to achieve high-efficiency power conversion and stable voltage output. Its low on-resistance and high current capability give it excellent performance in power management modules.
**Automotive electronics**:
In automotive electronic systems, this MOSFET can be used as a power switch element in motor drivers to control the start and stop and speed regulation of motors. Its high current capability and low on-resistance help improve the performance and reliability of automotive electronic systems.
**DC-DC converter**:
In DC-DC converters, 12CN10N-VB can be used as a switch tube to achieve voltage conversion of direct current. Its low on-resistance and high current capability help improve the efficiency and stability of DC-DC converters.
**Battery management system**:
In battery management systems, this MOSFET can be used for battery protection circuits and charge and discharge control. Its low on-resistance and high current capability help improve the efficiency and safety of battery management systems.
**Communication equipment**:
In communication equipment, this MOSFET can be used in power amplifiers and power management modules. Its high efficiency and low power consumption characteristics help improve the signal quality and energy efficiency of communication equipment.
Through the above application examples, it can be seen that 12CN10N-VB MOSFET has a wide range of application prospects in various fields and modules, and can meet the high performance and high reliability requirements in the medium voltage range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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