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12CN10N-VB TO252 Product details
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### 12CN10N-VB TO252 Product Introduction
12CN10N-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. When the gate-source voltage is 4.5V and 10V, its on-resistance (RDS(ON)) is 10.5mΩ and 8.5mΩ respectively. This MOSFET is manufactured using Trench technology and has low on-resistance and high current handling capability, making it suitable for a variety of high-performance electronic applications.
12CN10N-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. When the gate-source voltage is 4.5V and 10V, its on-resistance (RDS(ON)) is 10.5mΩ and 8.5mΩ respectively. This MOSFET is manufactured using Trench technology and has low on-resistance and high current handling capability, making it suitable for a variety of high-performance electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 2.5V | 85A | 10.5mΩ | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 12CN10N-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 10.5mΩ @ VGS=4.5V, 8.5mΩ @ VGS=10V |
| Continuous drain current (ID) | 85A |
| Technology| Trench |
| Parameters| Specifications|
| --- | --- |
| Product model| 12CN10N-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 10.5mΩ @ VGS=4.5V, 8.5mΩ @ VGS=10V |
| Continuous drain current (ID) | 85A |
| Technology| Trench |
Domain and module applications：
### Application fields and module examples
12CN10N-VB MOSFET can be widely used in various fields and modules, such as:
1. **Power management module**
- This MOSFET can be used in high-efficiency switching power supplies and DC-DC converters to provide stable and reliable energy conversion and current control, suitable for computers, communication equipment, etc.
2. **Automotive electronics**
- In automotive electronic systems, 12CN10N-VB can be used as a key component of battery management systems (BMS) and on-board power modules to ensure system safety and stability.
3. **Industrial control**
- Suitable for motor drives and load switches in industrial automation equipment, providing high-frequency operation and high current handling capabilities to improve equipment performance and reliability.
4. **Power tools**
- In high-performance power tools such as electric drills and electric saws, it provides efficient and stable power control through its high current handling capability and low on-resistance.
5. **Photovoltaic Inverter**
- This device can be used in the inverter of the photovoltaic system to provide efficient energy conversion and management, and improve the overall efficiency of the photovoltaic system.
From the above examples, it can be seen that 12CN10N-VB MOSFET has important application value in many fields and modules, and is an indispensable key component in many high-performance electronic systems.
12CN10N-VB MOSFET can be widely used in various fields and modules, such as:
1. **Power management module**
- This MOSFET can be used in high-efficiency switching power supplies and DC-DC converters to provide stable and reliable energy conversion and current control, suitable for computers, communication equipment, etc.
2. **Automotive electronics**
- In automotive electronic systems, 12CN10N-VB can be used as a key component of battery management systems (BMS) and on-board power modules to ensure system safety and stability.
3. **Industrial control**
- Suitable for motor drives and load switches in industrial automation equipment, providing high-frequency operation and high current handling capabilities to improve equipment performance and reliability.
4. **Power tools**
- In high-performance power tools such as electric drills and electric saws, it provides efficient and stable power control through its high current handling capability and low on-resistance.
5. **Photovoltaic Inverter**
- This device can be used in the inverter of the photovoltaic system to provide efficient energy conversion and management, and improve the overall efficiency of the photovoltaic system.
From the above examples, it can be seen that 12CN10N-VB MOSFET has important application value in many fields and modules, and is an indispensable key component in many high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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