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123N10N-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
123N10N-VB is a single-channel N-type MOSFET using trench technology for high-performance applications. It has low on-resistance and high withstand voltage characteristics, suitable for power control and switching circuits in various fields and modules.
123N10N-VB is a single-channel N-type MOSFET using trench technology for high-performance applications. It has low on-resistance and high withstand voltage characteristics, suitable for power control and switching circuits in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | 23mΩ | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description
- **Package:** TO263
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 2.5V
- **On-resistance:**
- @VGS=4.5V: 23mΩ
- @VGS=10V: 10mΩ
- **Maximum drain current (ID):** 100A
- **Package:** TO263
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 2.5V
- **On-resistance:**
- @VGS=4.5V: 23mΩ
- @VGS=10V: 10mΩ
- **Maximum drain current (ID):** 100A
Domain and module applications：
### Application fields and module examples
1. **Power module:** The high withstand voltage and low on-resistance of 123N10N-VB make it very suitable for the main switch in the switching power supply module.
2. **Motor drive:** In the motor drive, 123N10N-VB can be used as a low resistance, high efficiency power switch to control the start, stop and speed of the motor.
3. **Electric vehicle charging pile:** Due to its high current and high withstand voltage characteristics, 123N10N-VB can be used in the switching power supply unit in the electric vehicle charging pile to achieve fast and efficient charging.
These examples illustrate the wide application of 123N10N-VB in various fields and modules that require high-performance power control.
123N10N-VB is a single-channel N-type MOSFET using trench technology for high-performance applications. With low on-resistance and high withstand voltage characteristics, it is suitable for power control and switching circuits in various fields and modules.
1. **Power module:** The high withstand voltage and low on-resistance of 123N10N-VB make it very suitable for the main switch in the switching power supply module.
2. **Motor drive:** In the motor drive, 123N10N-VB can be used as a low resistance, high efficiency power switch to control the start, stop and speed of the motor.
3. **Electric vehicle charging pile:** Due to its high current and high withstand voltage characteristics, 123N10N-VB can be used in the switching power supply unit in the electric vehicle charging pile to achieve fast and efficient charging.
These examples illustrate the wide application of 123N10N-VB in various fields and modules that require high-performance power control.
123N10N-VB is a single-channel N-type MOSFET using trench technology for high-performance applications. With low on-resistance and high withstand voltage characteristics, it is suitable for power control and switching circuits in various fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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