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120N4LF6-VB TO252 Product details
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### 120N4LF6-VB MOSFET Product Introduction
VBsemi's 120N4LF6-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 6mΩ at a gate-source voltage of 4.5V and 5mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 85A and uses Trench technology. It has the characteristics of low on-resistance and high power handling capability, making it suitable for high-power application scenarios.
VBsemi's 120N4LF6-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 6mΩ at a gate-source voltage of 4.5V and 5mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 85A and uses Trench technology. It has the characteristics of low on-resistance and high power handling capability, making it suitable for high-power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 85A | 6mΩ | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 120N4LF6-VB MOSFET parameter description
- **Model: ** 120N4LF6-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 2.5V
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 6mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 5mΩ
- **Rated current (ID): ** 85A
- **Technology: ** Trench
- **Model: ** 120N4LF6-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 2.5V
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 6mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 5mΩ
- **Rated current (ID): ** 85A
- **Technology: ** Trench
Domain and module applications：
### 120N4LF6-VB MOSFET Application Fields and Module Examples
1. **Power Management:**
120N4LF6-VB MOSFET is suitable for high-power power management modules such as industrial power supplies and server power supplies. Its low on-resistance and high power handling capability enable it to handle high-power power management needs.
2. **Electric Vehicles:**
In electric vehicles, such as electric cars and electric bicycles, 120N4LF6-VB MOSFET can be used to control the current of the motor. Its high rated current and low on-resistance enable it to efficiently control the drive system of electric vehicles.
3. **Industrial Automation:**
In the field of industrial automation, 120N4LF6-VB MOSFET can be used to control the power supply and drive system of various industrial equipment. Its high power handling capability and low on-resistance ensure the stable operation of industrial equipment.
4. **Solar Inverter: **
In solar inverters, 120N4LF6-VB MOSFET can be used to control the inverter switch. Its high drain-source voltage and low on-resistance enable it to provide reliable power conversion in solar systems.
Through these application areas and module examples, 120N4LF6-VB MOSFET demonstrates its applicability in high power demand scenarios and becomes an indispensable core component in various electronic systems.
1. **Power Management:**
120N4LF6-VB MOSFET is suitable for high-power power management modules such as industrial power supplies and server power supplies. Its low on-resistance and high power handling capability enable it to handle high-power power management needs.
2. **Electric Vehicles:**
In electric vehicles, such as electric cars and electric bicycles, 120N4LF6-VB MOSFET can be used to control the current of the motor. Its high rated current and low on-resistance enable it to efficiently control the drive system of electric vehicles.
3. **Industrial Automation:**
In the field of industrial automation, 120N4LF6-VB MOSFET can be used to control the power supply and drive system of various industrial equipment. Its high power handling capability and low on-resistance ensure the stable operation of industrial equipment.
4. **Solar Inverter: **
In solar inverters, 120N4LF6-VB MOSFET can be used to control the inverter switch. Its high drain-source voltage and low on-resistance enable it to provide reliable power conversion in solar systems.
Through these application areas and module examples, 120N4LF6-VB MOSFET demonstrates its applicability in high power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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