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120N4F6-VB TO263 Product details
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### 120N4F6-VB TO263 Product Introduction
**Product Overview**:
120N4F6-VB is a high-performance single N-channel power MOSFET manufactured with Trench technology, featuring low on-resistance and high current handling capability. This MOSFET is packaged in TO263 and is suitable for low-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Low voltage handling capability**: VDS is 40V, suitable for low-voltage applications.
- **High gate voltage**: VGS is ±20V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3V, easy to drive.
- **Low on-resistance**: RDS(ON) is 2.5mΩ@VGS=4.5V, RDS(ON)=2mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High Current Capability**: ID is 150A, suitable for high current applications.
**Product Overview**:
120N4F6-VB is a high-performance single N-channel power MOSFET manufactured with Trench technology, featuring low on-resistance and high current handling capability. This MOSFET is packaged in TO263 and is suitable for low-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Low voltage handling capability**: VDS is 40V, suitable for low-voltage applications.
- **High gate voltage**: VGS is ±20V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3V, easy to drive.
- **Low on-resistance**: RDS(ON) is 2.5mΩ@VGS=4.5V, RDS(ON)=2mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High Current Capability**: ID is 150A, suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | 2.5mΩ | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 120N4F6-VB TO263 Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ@VGS=4.5V, 2mΩ@VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ@VGS=4.5V, 2mΩ@VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
### Applications and modules
**Power management module**:
In low-voltage power management modules, 120N4F6-VB can be used as a power switching element to achieve high-efficiency power conversion and stable voltage output. Its low on-resistance and high current capability give it excellent performance in power management modules.
**Power tools**:
In power tools, this MOSFET can be used as a power switching element in the motor driver to control the start, stop and speed regulation of power tools. Its high current capability and low on-resistance help improve the performance and durability of power tools.
**DC-DC converter**:
In DC-DC converters, 120N4F6-VB can be used as a switch tube to achieve voltage conversion of direct current. Its low on-resistance and high current capability help improve the efficiency and stability of DC-DC converters.
**Battery Management System**:
In the battery management system, this MOSFET can be used for battery protection circuits and charge and discharge control. Its low on-resistance and high current capability help improve the efficiency and safety of the battery management system.
**Electronic Cigarette**:
In electronic cigarettes, this MOSFET can be used to control the heating element of electronic cigarettes. Its high current capability and low on-resistance help improve the heating efficiency and user experience of electronic cigarettes.
Through the above application examples, it can be seen that 120N4F6-VB MOSFET has a wide range of application prospects in various fields and modules, and can meet the high performance and high reliability requirements in the low voltage range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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