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11WST8205-VB Product details
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### 11WST8205-VB MOSFET Product Introduction
VBsemi's 11WST8205-VB is a dual N-channel power MOSFET in SOT23-6 package technology. This MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 28mΩ at a gate-source voltage of 2.5V and 24mΩ at a gate-source voltage of 4.5V. The device has a rated current (ID) of 6A and uses Trench technology, which has the characteristics of low on-resistance and high efficiency, and is suitable for medium and low power applications.
VBsemi's 11WST8205-VB is a dual N-channel power MOSFET in SOT23-6 package technology. This MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 28mΩ at a gate-source voltage of 2.5V and 24mΩ at a gate-source voltage of 4.5V. The device has a rated current (ID) of 6A and uses Trench technology, which has the characteristics of low on-resistance and high efficiency, and is suitable for medium and low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### 11WST8205-VB MOSFET parameter description
- **Model: ** 11WST8205-VB
- **Package: ** SOT23-6
- **Configuration: ** Dual N-channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 0.5~1.5V
- **On-state resistance (RDS(ON)) @VGS=2.5V: ** 28mΩ
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 24mΩ
- **Rated current (ID): ** 6A
- **Technology: ** Trench
Domain and module applications：
### 11WST8205-VB MOSFET Applications and Module Examples
1. **Power Management:**
11WST8205-VB MOSFET is suitable for low- to medium-power power management modules, such as mobile phone chargers and battery management systems. Its low on-resistance and high efficiency enable it to handle the power management needs of small electronic devices.
2. **Power Tools:**
In power tools, such as electric screwdrivers and electric wrenches, 11WST8205-VB MOSFET can be used to control the current of the motor. Its high rated current and low on-resistance enable it to efficiently control the operation of power tools.
3. **LED Lighting:**
In LED lighting systems, 11WST8205-VB MOSFET can be used to control the current of LED lamp beads. Its high reliability and low on-resistance ensure the stability and life of LED lighting systems.
4. **Automotive Electronics:**
In automotive electronic systems, such as on-board chargers and on-board power management systems, 11WST8205-VB MOSFET can be used to control the switching of power supplies. Its high drain-source voltage and low on-resistance ensure the stability and reliability of automotive electronic systems.
Through these application areas and module examples, 11WST8205-VB MOSFET demonstrates its applicability in low and medium power demand scenarios, becoming an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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