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11NM65N-VB TO252 Product details
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### 11NM65N-VB TO252 Product Introduction
**Product Overview**:
11NM65N-VB is a high-performance single N-channel power MOSFET manufactured with SJ_Multi-EPI technology, featuring low on-resistance and high voltage withstand capability. This MOSFET is packaged in TO252 and is suitable for medium-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Medium voltage withstand capability**: VDS is 650V, suitable for medium voltage applications.
- **High gate voltage**: VGS is ±30V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 370mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **Moderate current capability**: ID is 11A, suitable for medium current applications.
**Product Overview**:
11NM65N-VB is a high-performance single N-channel power MOSFET manufactured with SJ_Multi-EPI technology, featuring low on-resistance and high voltage withstand capability. This MOSFET is packaged in TO252 and is suitable for medium-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **Medium voltage withstand capability**: VDS is 650V, suitable for medium voltage applications.
- **High gate voltage**: VGS is ±30V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 370mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **Moderate current capability**: ID is 11A, suitable for medium current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 11NM65N-VB TO252 Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Continuous drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Continuous drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Modules
**Power Inverter**:
In medium voltage power inverters, 11NM65N-VB can be used as a power switch element to convert DC to AC. Its low on-resistance and moderate current capability enable it to have high efficiency and reliability in inverters.
**Motor Driver**:
In motor control systems, this MOSFET can be used for power switches in motor drivers to control the start and stop and speed regulation of motors. Its high voltage tolerance and low on-resistance help improve the efficiency and response speed of motor systems.
**Industrial Control**:
In industrial control systems, 11NM65N-VB can be used in various power converters and motor drivers to achieve high efficiency and high reliability power conversion and control.
**LED Lighting**:
In LED lighting applications, this MOSFET can be used as a power switch element in LED drivers. Its high efficiency and low power consumption characteristics help improve the energy efficiency and life of LED lamps.
**UPS system**:
In UPS systems, this MOSFET can be used for power switching and battery management. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of UPS systems and ensure the continuity of power supply.
Through the above application examples, it can be seen that 11NM65N-VB MOSFET has a wide range of application prospects in various fields and modules, and can meet the high performance and high reliability requirements in the medium voltage range.
**Power Inverter**:
In medium voltage power inverters, 11NM65N-VB can be used as a power switch element to convert DC to AC. Its low on-resistance and moderate current capability enable it to have high efficiency and reliability in inverters.
**Motor Driver**:
In motor control systems, this MOSFET can be used for power switches in motor drivers to control the start and stop and speed regulation of motors. Its high voltage tolerance and low on-resistance help improve the efficiency and response speed of motor systems.
**Industrial Control**:
In industrial control systems, 11NM65N-VB can be used in various power converters and motor drivers to achieve high efficiency and high reliability power conversion and control.
**LED Lighting**:
In LED lighting applications, this MOSFET can be used as a power switch element in LED drivers. Its high efficiency and low power consumption characteristics help improve the energy efficiency and life of LED lamps.
**UPS system**:
In UPS systems, this MOSFET can be used for power switching and battery management. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of UPS systems and ensure the continuity of power supply.
Through the above application examples, it can be seen that 11NM65N-VB MOSFET has a wide range of application prospects in various fields and modules, and can meet the high performance and high reliability requirements in the medium voltage range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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