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11NM60ND-VB TO252 Product details
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### Product Introduction
**Model: 11NM60ND-VB TO252**
VBsemi's 11NM60ND-VB is a high-performance N-channel MOSFET designed with advanced SJ_Multi-EPI technology, featuring low on-resistance and high voltage withstand capability, suitable for a variety of high-voltage and high-power applications.
**Model: 11NM60ND-VB TO252**
VBsemi's 11NM60ND-VB is a high-performance N-channel MOSFET designed with advanced SJ_Multi-EPI technology, featuring low on-resistance and high voltage withstand capability, suitable for a variety of high-voltage and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and module examples
1. **Power inverter**:
- **Home inverter**: 11NM60ND-VB is suitable for high-voltage switches in home inverters, such as home solar battery systems, UPS systems, etc., providing reliable power conversion functions.
- **Industrial inverter**: In industrial-grade inverters, this MOSFET can be used as a high-voltage switching device for power conversion and management of various industrial equipment.
2. **Electric vehicle charging pile**:
- **DC charging pile**: 11NM60ND-VB can be used as a high-voltage switch in a DC charging pile to ensure fast charging and high-efficiency conversion of electric vehicles.
- **AC charging pile**: In an AC charging pile, this MOSFET can be used for a high-voltage switch to provide efficient power conversion, suitable for urban and road charging facilities.
3. **Power Management**:
- **High-voltage Switching Power Supply**: Suitable for high-voltage switching devices in various high-voltage switching power supplies, such as server power supplies, industrial control power supplies, etc., providing stable and reliable power management functions.
- **Power Inverter**: In the power inverter, this MOSFET can be used for high-voltage switching, providing high-efficiency conversion and power management, suitable for various power systems.
4. **Medical Equipment**:
- **X-ray Generator**: 11NM60ND-VB can be used for high-voltage switching in X-ray generators to ensure stable and efficient operation of X-ray generators.
- **Medical Imaging Equipment**: In medical imaging equipment, this MOSFET can be used for high-voltage switching, providing high-quality imaging and stable equipment operation.
Through its excellent electrical performance and a wide range of applications, VBsemi's 11NM60ND-VB MOSFET provides a reliable and efficient solution for a variety of high-voltage and high-power applications.
1. **Power inverter**:
- **Home inverter**: 11NM60ND-VB is suitable for high-voltage switches in home inverters, such as home solar battery systems, UPS systems, etc., providing reliable power conversion functions.
- **Industrial inverter**: In industrial-grade inverters, this MOSFET can be used as a high-voltage switching device for power conversion and management of various industrial equipment.
2. **Electric vehicle charging pile**:
- **DC charging pile**: 11NM60ND-VB can be used as a high-voltage switch in a DC charging pile to ensure fast charging and high-efficiency conversion of electric vehicles.
- **AC charging pile**: In an AC charging pile, this MOSFET can be used for a high-voltage switch to provide efficient power conversion, suitable for urban and road charging facilities.
3. **Power Management**:
- **High-voltage Switching Power Supply**: Suitable for high-voltage switching devices in various high-voltage switching power supplies, such as server power supplies, industrial control power supplies, etc., providing stable and reliable power management functions.
- **Power Inverter**: In the power inverter, this MOSFET can be used for high-voltage switching, providing high-efficiency conversion and power management, suitable for various power systems.
4. **Medical Equipment**:
- **X-ray Generator**: 11NM60ND-VB can be used for high-voltage switching in X-ray generators to ensure stable and efficient operation of X-ray generators.
- **Medical Imaging Equipment**: In medical imaging equipment, this MOSFET can be used for high-voltage switching, providing high-quality imaging and stable equipment operation.
Through its excellent electrical performance and a wide range of applications, VBsemi's 11NM60ND-VB MOSFET provides a reliable and efficient solution for a variety of high-voltage and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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