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11N80L-T3P-T-VB Product details
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### 11N80L-T3P-T-VB TO247 Product Introduction
11N80L-T3P-T-VB is a single N-channel MOSFET launched by VBsemi, using TO247 packaging technology. The device has a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 370mΩ. This MOSFET is manufactured using SJ_Multi-EPI technology, has low on-resistance and good voltage resistance, and is suitable for applications in high-voltage environments.
11N80L-T3P-T-VB is a single N-channel MOSFET launched by VBsemi, using TO247 packaging technology. The device has a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 370mΩ. This MOSFET is manufactured using SJ_Multi-EPI technology, has low on-resistance and good voltage resistance, and is suitable for applications in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 11N80L-T3P-T-VB |
| Package| TO247 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 370mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| SJ_Multi-EPI |
| Parameters| Specifications|
| --- | --- |
| Product model| 11N80L-T3P-T-VB |
| Package| TO247 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 370mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
### Applications and Module Examples
11N80L-T3P-T-VB This high-voltage MOSFET can be widely used in various fields and modules, such as:
1. **Power Inverter**
- In the fields of industry and power electronics, 11N80L-T3P-T-VB can be used in the switching circuit in the power inverter to achieve efficient conversion and control of electric energy.
2. **High-voltage Power Management**
- Suitable for switching circuits and voltage stabilization circuits in high-voltage power management systems to provide stable and reliable power output.
3. **Lighting Application**
- In high-voltage LED lighting systems, 11N80L-T3P-T-VB can be used as a switching element of an LED driver to achieve precise control and regulation of LED lights.
4. **Electric vehicle charging pile**
- In electric vehicle charging piles, 11N80L-T3P-T-VB can be used as a key component of the charging pile control circuit to ensure the safety and stability of the charging pile.
5. **Industrial control**
- The device can be used for high-voltage switching circuits and load switches in industrial control systems, supporting high-frequency operation and high-current processing, improving the performance and reliability of equipment.
From the above examples, it can be seen that the 11N80L-T3P-T-VB MOSFET has good performance and reliability in high-voltage environments, is suitable for a variety of applications, and is an ideal choice in many electronic systems.
11N80L-T3P-T-VB This high-voltage MOSFET can be widely used in various fields and modules, such as:
1. **Power Inverter**
- In the fields of industry and power electronics, 11N80L-T3P-T-VB can be used in the switching circuit in the power inverter to achieve efficient conversion and control of electric energy.
2. **High-voltage Power Management**
- Suitable for switching circuits and voltage stabilization circuits in high-voltage power management systems to provide stable and reliable power output.
3. **Lighting Application**
- In high-voltage LED lighting systems, 11N80L-T3P-T-VB can be used as a switching element of an LED driver to achieve precise control and regulation of LED lights.
4. **Electric vehicle charging pile**
- In electric vehicle charging piles, 11N80L-T3P-T-VB can be used as a key component of the charging pile control circuit to ensure the safety and stability of the charging pile.
5. **Industrial control**
- The device can be used for high-voltage switching circuits and load switches in industrial control systems, supporting high-frequency operation and high-current processing, improving the performance and reliability of equipment.
From the above examples, it can be seen that the 11N80L-T3P-T-VB MOSFET has good performance and reliability in high-voltage environments, is suitable for a variety of applications, and is an ideal choice in many electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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