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11N80C3-VB TO247 Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 11N80C3-VB is a single N-channel MOSFET using SJ_Multi-EPI technology with up to 800V drain-source voltage (VDS) and 30V gate-source voltage (VGS). The device has a drain-source on-resistance (RDS(ON)) of 370mΩ at VGS=10V, a drain current (ID) of 15A and a threshold voltage (Vth) of 3.5V.
VBsemi's 11N80C3-VB is a single N-channel MOSFET using SJ_Multi-EPI technology with up to 800V drain-source voltage (VDS) and 30V gate-source voltage (VGS). The device has a drain-source on-resistance (RDS(ON)) of 370mΩ at VGS=10V, a drain current (ID) of 15A and a threshold voltage (Vth) of 3.5V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Parameter Description
- **Model**: 11N80C3-VB
- **Package**: TO247
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 370mΩ
- **ID (drain current)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: 11N80C3-VB
- **Package**: TO247
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 370mΩ
- **ID (drain current)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
1. **Power transmission and distribution**: Due to its high voltage and current characteristics, the 11N80C3-VB can be used for high-voltage switches and line protectors in power transmission and distribution systems.
2. **Industrial control**: In industrial control systems, the device can be used for power switching and current control, such as in motor control and industrial robots.
3. **Power modules**: This MOSFET is suitable for power modules that require high voltage and current, such as switching power supplies and voltage regulators.
4. **Photovoltaic inverter**: In photovoltaic inverters, the 11N80C3-VB can be used as a power switch to achieve efficient conversion and inverter control of photovoltaic power.
5. **Electric vehicle charger**: Due to its high voltage and current capacity, the device is suitable for power switching and charging control in electric vehicle chargers.
The above examples only illustrate some of the fields and modules where the 11N80C3-VB may be applied. The specific application depends on the design requirements and environment.
1. **Power transmission and distribution**: Due to its high voltage and current characteristics, the 11N80C3-VB can be used for high-voltage switches and line protectors in power transmission and distribution systems.
2. **Industrial control**: In industrial control systems, the device can be used for power switching and current control, such as in motor control and industrial robots.
3. **Power modules**: This MOSFET is suitable for power modules that require high voltage and current, such as switching power supplies and voltage regulators.
4. **Photovoltaic inverter**: In photovoltaic inverters, the 11N80C3-VB can be used as a power switch to achieve efficient conversion and inverter control of photovoltaic power.
5. **Electric vehicle charger**: Due to its high voltage and current capacity, the device is suitable for power switching and charging control in electric vehicle chargers.
The above examples only illustrate some of the fields and modules where the 11N80C3-VB may be applied. The specific application depends on the design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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