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11N80C3-VB TO220F Product details
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## Product Introduction:
VBsemi's MOSFET product 11N80C3-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 800V and a drain current (ID) capability of 15A. The product is provided in a TO220F package and is suitable for power electronics applications that require high voltage and high performance.
VBsemi's MOSFET product 11N80C3-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has a drain-source voltage (VDS) of 800V and a drain current (ID) capability of 15A. The product is provided in a TO220F package and is suitable for power electronics applications that require high voltage and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
## Parameter Description:
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 370mΩ @ VGS=10V
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 370mΩ @ VGS=10V
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
Domain and module applications：
## Applications and modules:
1. **Power modules**: Due to its high drain voltage and low on-resistance, 11N80C3-VB is suitable for high-performance switching power modules such as DC-DC converters and AC-DC converters.
2. **Industrial control**: In industrial control equipment, this MOSFET can be used in inverters, motor drives, and power management units to provide reliable power control and conversion.
3. **Electric vehicle charging piles**: 11N80C3-VB is suitable for switching power supply units in electric vehicle charging piles, supporting high power density and energy efficiency.
4. **Solar inverter**: This MOSFET can also be used in solar inverters to convert DC power generated by solar panels into AC power.
5. **High-voltage DC transmission system**: In high-voltage DC transmission systems, 11N80C3-VB can be used to control and protect the stability and efficiency of power systems.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 11N80C3-VB MOSFET product.
1. **Power modules**: Due to its high drain voltage and low on-resistance, 11N80C3-VB is suitable for high-performance switching power modules such as DC-DC converters and AC-DC converters.
2. **Industrial control**: In industrial control equipment, this MOSFET can be used in inverters, motor drives, and power management units to provide reliable power control and conversion.
3. **Electric vehicle charging piles**: 11N80C3-VB is suitable for switching power supply units in electric vehicle charging piles, supporting high power density and energy efficiency.
4. **Solar inverter**: This MOSFET can also be used in solar inverters to convert DC power generated by solar panels into AC power.
5. **High-voltage DC transmission system**: In high-voltage DC transmission systems, 11N80C3-VB can be used to control and protect the stability and efficiency of power systems.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 11N80C3-VB MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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