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11N65C3-VB TO220F Product details
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### 11N65C3-VB TO220F Product Introduction
**Product Overview**:
11N65C3-VB is a high-performance single N-channel power MOSFET manufactured with Plannar technology, featuring low on-resistance and high voltage withstand capability. This MOSFET is packaged in TO220F and is suitable for high-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **High voltage withstand capability**: VDS is 650V, suitable for high voltage applications.
- **High gate voltage**: VGS is ±30V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 320mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High current capability**: ID is 20A, suitable for high current applications.
**Product Overview**:
11N65C3-VB is a high-performance single N-channel power MOSFET manufactured with Plannar technology, featuring low on-resistance and high voltage withstand capability. This MOSFET is packaged in TO220F and is suitable for high-voltage power management applications that require high efficiency and high reliability.
**Product Features**:
- **High voltage withstand capability**: VDS is 650V, suitable for high voltage applications.
- **High gate voltage**: VGS is ±30V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 3.5V, easy to drive.
- **Low on-resistance**: RDS(ON) is 320mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High current capability**: ID is 20A, suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 11N65C3-VB TO220F Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
### Applications and Modules
**Electric Vehicles**:
In electric vehicles, 11N65C3-VB can be used as a power switching element in motor drives. Due to its high voltage tolerance and low on-resistance, it can effectively reduce power losses and improve the efficiency of the overall system.
**Industrial Power**:
In industrial power systems, this MOSFET can be used in various power converters and motor drives. Its high voltage tolerance and moderate current capability are suitable for power control applications in various industrial environments.
**UPS Systems**:
In UPS systems, this MOSFET can be used for power switching and battery management. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of UPS systems and ensure the continuity of power supply.
**Solar Inverters**:
In solar inverters, 11N65C3-VB can be used as a switching element to achieve the conversion and transmission of solar power. Its high efficiency and high reliability help improve the overall performance of solar systems.
**Industrial Control**:
In industrial control systems, this MOSFET can be used in various power converters and motor drivers to achieve high-efficiency and high-reliability power conversion and control.
Through the above application examples, it can be seen that 11N65C3-VB MOSFET has broad application prospects in various fields and modules, and can meet high performance and high reliability requirements.
**Electric Vehicles**:
In electric vehicles, 11N65C3-VB can be used as a power switching element in motor drives. Due to its high voltage tolerance and low on-resistance, it can effectively reduce power losses and improve the efficiency of the overall system.
**Industrial Power**:
In industrial power systems, this MOSFET can be used in various power converters and motor drives. Its high voltage tolerance and moderate current capability are suitable for power control applications in various industrial environments.
**UPS Systems**:
In UPS systems, this MOSFET can be used for power switching and battery management. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of UPS systems and ensure the continuity of power supply.
**Solar Inverters**:
In solar inverters, 11N65C3-VB can be used as a switching element to achieve the conversion and transmission of solar power. Its high efficiency and high reliability help improve the overall performance of solar systems.
**Industrial Control**:
In industrial control systems, this MOSFET can be used in various power converters and motor drivers to achieve high-efficiency and high-reliability power conversion and control.
Through the above application examples, it can be seen that 11N65C3-VB MOSFET has broad application prospects in various fields and modules, and can meet high performance and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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