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11N60C3-VB TO247 Product details
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## Product Introduction:
VBsemi's MOSFET product 11N60C3-VB is a single N-channel MOSFET that uses Plannar technology and has a drain-source voltage (VDS) of 650V and a drain current (ID) capability of 18A. The product is provided in a TO247 package and is suitable for power electronics applications that require high voltage and high performance.
VBsemi's MOSFET product 11N60C3-VB is a single N-channel MOSFET that uses Plannar technology and has a drain-source voltage (VDS) of 650V and a drain current (ID) capability of 18A. The product is provided in a TO247 package and is suitable for power electronics applications that require high voltage and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
## Parameter description:
- Package: TO247
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 430mΩ @ VGS=10V
- Drain current (ID): 18A
- Technology: Plannar
- Package: TO247
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 430mΩ @ VGS=10V
- Drain current (ID): 18A
- Technology: Plannar
Domain and module applications：
## Applications and modules:
1. **Electric Vehicles**: Due to its high drain voltage and low on-resistance, the 11N60C3-VB is suitable for power control modules in electric vehicles, such as motor drives and battery management systems.
2. **Industrial Power**: In industrial power systems, this MOSFET can be used in switching power modules such as inverters, UPS, and power converters, providing high efficiency and reliability.
3. **Solar Inverters**: The 11N60C3-VB is suitable for power switching modules in solar inverters, supporting the conversion of DC power generated by solar panels into AC power.
4. **Power Transmission**: In high-voltage DC transmission systems, the 11N60C3-VB can be used to control and protect the stability and efficiency of the power system.
5. **Welding Equipment**: This MOSFET can also be used in power control units in welding equipment, providing high power density and reliability.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 11N60C3-VB MOSFET product.
1. **Electric Vehicles**: Due to its high drain voltage and low on-resistance, the 11N60C3-VB is suitable for power control modules in electric vehicles, such as motor drives and battery management systems.
2. **Industrial Power**: In industrial power systems, this MOSFET can be used in switching power modules such as inverters, UPS, and power converters, providing high efficiency and reliability.
3. **Solar Inverters**: The 11N60C3-VB is suitable for power switching modules in solar inverters, supporting the conversion of DC power generated by solar panels into AC power.
4. **Power Transmission**: In high-voltage DC transmission systems, the 11N60C3-VB can be used to control and protect the stability and efficiency of the power system.
5. **Welding Equipment**: This MOSFET can also be used in power control units in welding equipment, providing high power density and reliability.
The above is an introduction to the product profile, detailed parameter description, applicable fields and modules of the 11N60C3-VB MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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