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11N50L-TF1-T-VB Product details
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### 11N50L-TF1-T-VB MOSFET Product Introduction
VBsemi's 11N50L-TF1-T-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of 30V (±V). Its on-state resistance (RDS(ON)) is 260mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 18A and uses Plannar technology. It has high voltage tolerance and low on-resistance and is suitable for high-voltage, high-power applications.
VBsemi's 11N50L-TF1-T-VB is a single N-channel power MOSFET in TO220F packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of 30V (±V). Its on-state resistance (RDS(ON)) is 260mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 18A and uses Plannar technology. It has high voltage tolerance and low on-resistance and is suitable for high-voltage, high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 11N50L-TF1-T-VB MOSFET parameter description
- **Model: ** 11N50L-TF1-T-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 550V
- **Gate-source voltage (VGS): ** 30 (±V)
- **Threshold voltage (Vth): ** 3V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 260mΩ
- **Rated current (ID): ** 18A
- **Technology: ** Plannar
- **Model: ** 11N50L-TF1-T-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 550V
- **Gate-source voltage (VGS): ** 30 (±V)
- **Threshold voltage (Vth): ** 3V
- **On-state resistance (RDS(ON)) @ VGS = 10V: ** 260mΩ
- **Rated current (ID): ** 18A
- **Technology: ** Plannar
Domain and module applications：
### 11N50L-TF1-T-VB MOSFET Applications and Module Examples
1. **Power Inverter:**
11N50L-TF1-T-VB MOSFET is suitable for high-voltage switching in solar inverters and grid inverters. Its high drain-source voltage and low on-resistance enable it to stably convert DC to AC in the inverter, providing reliable power output.
2. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 11N50L-TF1-T-VB MOSFET can be used to control the DC-DC converter of the charging pile. Its high rated current and low on-resistance enable it to efficiently convert electrical energy and provide fast charging services.
3. **Industrial High-Voltage Power Supply:**
In industrial equipment, especially equipment that requires high-voltage power supply, 11N50L-TF1-T-VB MOSFET can be used to control the switch of high-voltage power supply. Its high drain-source voltage and high reliability make it an ideal choice for industrial equipment.
4. **Medical equipment: **
In some medical equipment that requires high-voltage switching, such as X-ray machines and MRI equipment, 11N50L-TF1-T-VB MOSFET can be used to control the switching of power. Its high voltage withstand capability and low on-resistance ensure the stability and reliability of the equipment.
Through these application areas and module examples, 11N50L-TF1-T-VB MOSFET demonstrates its applicability in high-voltage, high-power demand scenarios, becoming an indispensable core component in various electronic systems.
1. **Power Inverter:**
11N50L-TF1-T-VB MOSFET is suitable for high-voltage switching in solar inverters and grid inverters. Its high drain-source voltage and low on-resistance enable it to stably convert DC to AC in the inverter, providing reliable power output.
2. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 11N50L-TF1-T-VB MOSFET can be used to control the DC-DC converter of the charging pile. Its high rated current and low on-resistance enable it to efficiently convert electrical energy and provide fast charging services.
3. **Industrial High-Voltage Power Supply:**
In industrial equipment, especially equipment that requires high-voltage power supply, 11N50L-TF1-T-VB MOSFET can be used to control the switch of high-voltage power supply. Its high drain-source voltage and high reliability make it an ideal choice for industrial equipment.
4. **Medical equipment: **
In some medical equipment that requires high-voltage switching, such as X-ray machines and MRI equipment, 11N50L-TF1-T-VB MOSFET can be used to control the switching of power. Its high voltage withstand capability and low on-resistance ensure the stability and reliability of the equipment.
Through these application areas and module examples, 11N50L-TF1-T-VB MOSFET demonstrates its applicability in high-voltage, high-power demand scenarios, becoming an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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