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11N40L-TF3-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 11N40L-TF3-T-VB is a single N-channel MOSFET using Plannar technology with a drain-source voltage (VDS) of up to 550V and a gate-source voltage (VGS) of 30V. The device has a drain-source on-resistance (RDS(ON)) of 260mΩ at VGS=10V, a drain current (ID) of 18A and a threshold voltage (Vth) of 3V.
VBsemi's 11N40L-TF3-T-VB is a single N-channel MOSFET using Plannar technology with a drain-source voltage (VDS) of up to 550V and a gate-source voltage (VGS) of 30V. The device has a drain-source on-resistance (RDS(ON)) of 260mΩ at VGS=10V, a drain current (ID) of 18A and a threshold voltage (Vth) of 3V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Model**: 11N40L-TF3-T-VB
- **Package**: TO220F
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 550V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 260mΩ
- **ID (drain current)**: 18A
- **Technology**: Plannar
- **Model**: 11N40L-TF3-T-VB
- **Package**: TO220F
- **Structure**: Single N-channel
- **VDS (drain-source voltage)**: 550V
- **VGS (gate-source voltage)**: 30V (±)
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (drain-source on-resistance)**:
- When VGS=10V: 260mΩ
- **ID (drain current)**: 18A
- **Technology**: Plannar
Domain and module applications：
### Applications and Module Examples
1. **Power Modules**: The high voltage and current characteristics of the 11N40L-TF3-T-VB make it suitable for power modules such as DC-DC converters and high-voltage regulators.
2. **Industrial Electronics**: In industrial electronic equipment, the device can be used to control and regulate current, such as in motor control, lighting control, and power management systems.
3. **Solar Inverters**: Due to its high voltage and current capabilities, the 11N40L-TF3-T-VB is suitable for power switching and inverter control in solar inverters.
4. **Electric Vehicle Chargers**: In electric vehicle chargers, the device can be used as a power switch for efficient power conversion and charging control.
5. **Power Transmission and Distribution**: This MOSFET can be used for high-voltage switching in power transmission and distribution systems, such as grid voltage regulation and line protection.
The above examples only illustrate some of the possible application areas and modules of 11N40L-TF3-T-VB. The specific application depends on the design requirements and environment.
1. **Power Modules**: The high voltage and current characteristics of the 11N40L-TF3-T-VB make it suitable for power modules such as DC-DC converters and high-voltage regulators.
2. **Industrial Electronics**: In industrial electronic equipment, the device can be used to control and regulate current, such as in motor control, lighting control, and power management systems.
3. **Solar Inverters**: Due to its high voltage and current capabilities, the 11N40L-TF3-T-VB is suitable for power switching and inverter control in solar inverters.
4. **Electric Vehicle Chargers**: In electric vehicle chargers, the device can be used as a power switch for efficient power conversion and charging control.
5. **Power Transmission and Distribution**: This MOSFET can be used for high-voltage switching in power transmission and distribution systems, such as grid voltage regulation and line protection.
The above examples only illustrate some of the possible application areas and modules of 11N40L-TF3-T-VB. The specific application depends on the design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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