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110N2-VB Product details
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### 110N2-VB MOSFET Product Introduction
VBsemi's 110N2-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 6mΩ at a gate-source voltage of 2.5V and 4.5mΩ at a gate-source voltage of 4.5V. The device has a rated current (ID) of up to 100A and uses advanced Trench technology, which gives it low on-resistance and high efficiency, making it very suitable for high-power, high-frequency applications.
VBsemi's 110N2-VB is a single N-channel power MOSFET in TO252 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). Its on-state resistance (RDS(ON)) is 6mΩ at a gate-source voltage of 2.5V and 4.5mΩ at a gate-source voltage of 4.5V. The device has a rated current (ID) of up to 100A and uses advanced Trench technology, which gives it low on-resistance and high efficiency, making it very suitable for high-power, high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | 6mΩ | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 110N2-VB MOSFET parameter description
- **Model: ** 110N2-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 0.5~1.5V
- **On-state resistance (RDS(ON)) @VGS=2.5V: ** 6mΩ
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 4.5mΩ
- **Rated current (ID): ** 100A
- **Technology: ** Trench
- **Model: ** 110N2-VB
- **Package: ** TO252
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 0.5~1.5V
- **On-state resistance (RDS(ON)) @VGS=2.5V: ** 6mΩ
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 4.5mΩ
- **Rated current (ID): ** 100A
- **Technology: ** Trench
Domain and module applications：
### 110N2-VB MOSFET Applications and Module Examples
1. **Power Management:**
110N2-VB MOSFET is suitable for power management modules, especially in DC-DC converters and uninterruptible power supplies (UPS). Its low on-resistance and high rated current enable it to effectively handle high power conversion requirements and improve system efficiency and stability.
2. **Power Tools:**
Due to its high current carrying capacity and low on-resistance, 110N2-VB is very suitable for motor drive modules in power tools. This MOSFET can switch quickly at high frequencies to provide stable current output, thereby improving the performance and life of power tools.
3. **Automotive Electronics:**
In the field of automotive electronics, 110N2-VB MOSFET is widely used in motor control and battery management systems. Its efficient current handling capability and high temperature resistance enable it to work reliably in harsh automotive environments, providing high-quality solutions for the vehicle's electrical system.
4. **Consumer Electronics: **
In consumer electronics, such as smartphones and laptops, 110N2-VB MOSFETs are used in battery protection circuits and power management units. The low on-resistance characteristics of this MOSFET can reduce power loss and extend the battery life of the device.
Through these application areas and module examples, 110N2-VB MOSFET demonstrates its applicability in a variety of high-power and high-efficiency demand scenarios, becoming an indispensable core component in various electronic systems.
1. **Power Management:**
110N2-VB MOSFET is suitable for power management modules, especially in DC-DC converters and uninterruptible power supplies (UPS). Its low on-resistance and high rated current enable it to effectively handle high power conversion requirements and improve system efficiency and stability.
2. **Power Tools:**
Due to its high current carrying capacity and low on-resistance, 110N2-VB is very suitable for motor drive modules in power tools. This MOSFET can switch quickly at high frequencies to provide stable current output, thereby improving the performance and life of power tools.
3. **Automotive Electronics:**
In the field of automotive electronics, 110N2-VB MOSFET is widely used in motor control and battery management systems. Its efficient current handling capability and high temperature resistance enable it to work reliably in harsh automotive environments, providing high-quality solutions for the vehicle's electrical system.
4. **Consumer Electronics: **
In consumer electronics, such as smartphones and laptops, 110N2-VB MOSFETs are used in battery protection circuits and power management units. The low on-resistance characteristics of this MOSFET can reduce power loss and extend the battery life of the device.
Through these application areas and module examples, 110N2-VB MOSFET demonstrates its applicability in a variety of high-power and high-efficiency demand scenarios, becoming an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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