Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
200V |
|
4V |
100A |
|
|
7.6mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
200V |
|
4V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
200V |
|
4V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
### 110N20N-VB TO220 Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 7.6mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
**Product Features**:
- **High voltage withstand capability**: VDS is 200V, suitable for high voltage applications.
- **High gate voltage**: VGS is ±20V, providing greater design flexibility.
- **Low threshold voltage**: Vth is 4V, easy to drive.
- **Ultra-low on-resistance**: RDS(ON) is 7.6mΩ@VGS=10V, improving efficiency and reducing power consumption.
- **High current capability**: ID is 100A, suitable for high current applications.
### Application Fields and Modules
**Electric Vehicles**:
In the field of electric vehicles, the 110N20N-VB can be used as a power switching element in the motor drive controller. Due to its high current handling capability and low on-resistance, it can effectively reduce power loss and improve the efficiency of the overall system.
**Industrial Control**:
In industrial control systems, this MOSFET can be used in power converters and motor drivers. Its high voltage tolerance and high reliability make it suitable for harsh industrial environments and improve the stability and durability of equipment.
**Photovoltaic inverter**:
In photovoltaic systems, 110N20N-VB can be used as a switching element in the inverter, using its high voltage and high current capabilities to achieve efficient power conversion and transmission, and improve the overall efficiency of the photovoltaic system.
**Uninterruptible power supply (UPS)**:
This MOSFET is suitable for the power management part of the UPS system. Its low on-resistance and high current handling capability can significantly improve the efficiency and reliability of the UPS and ensure the continuity of power supply.
**Switching power supply (SMPS)**:
In switching power supply applications, 110N20N-VB can significantly improve the power conversion efficiency with its high efficiency and low loss characteristics, and is suitable for power modules of various electronic devices.
Through the above application examples, it can be seen that 110N20N-VB MOSFET has broad application prospects in various fields and modules, and can meet the needs of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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