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110N12N-VB TO252 Product details
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### 110N12N-VB TO252 Product Introduction
110N12N-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and its on-resistance (RDS(ON)) is only 114mΩ when the gate-source voltage is 10V. This MOSFET is manufactured using Trench technology, has low on-resistance and excellent current handling capability, and is very suitable for applications that require high efficiency and high performance.
110N12N-VB is a single N-channel MOSFET launched by VBsemi, using TO252 packaging technology. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and its on-resistance (RDS(ON)) is only 114mΩ when the gate-source voltage is 10V. This MOSFET is manufactured using Trench technology, has low on-resistance and excellent current handling capability, and is very suitable for applications that require high efficiency and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
| --- | --- |
| Product model| 110N12N-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 114mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| Trench |
| Parameters| Specifications|
| --- | --- |
| Product model| 110N12N-VB |
| Package| TO252 |
| Configuration| Single N-channel |
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 114mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| Trench |
Domain and module applications：
### Applications and Module Examples
110N12N-VB This high-performance MOSFET can play an important role in multiple fields and modules:
1. **Power Management Module**
- This MOSFET can be used in switch mode power supplies (SMPS) and DC-DC converters to provide efficient power conversion, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor Driver**
- Suitable for motor control applications, including brushless DC motors (BLDC) and brushed DC motors, through its low on-resistance and high current handling capability, to ensure smooth and efficient motor operation.
3. **Battery Management System (BMS)**
- In electric vehicles and energy storage systems, 110N12N-VB can be used as a switching element in battery protection and management circuits, providing reliable current switching and protection functions to extend battery life.
4. **Industrial Automation**
- This device can be used as a relay replacement and load switch in industrial control systems, supporting high-frequency operation and low power consumption requirements, improving system reliability and response speed.
5. **Consumer Electronics**
- In consumer electronics products such as smartphones, tablets, and portable devices, 110N12N-VB can be used as a power switch and charging management, optimizing circuit design and providing a stable power management solution.
Through these application examples, it can be seen that 110N12N-VB MOSFET can provide excellent performance and reliability in a wide range of fields and is an indispensable component in many electronic designs.
110N12N-VB This high-performance MOSFET can play an important role in multiple fields and modules:
1. **Power Management Module**
- This MOSFET can be used in switch mode power supplies (SMPS) and DC-DC converters to provide efficient power conversion, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor Driver**
- Suitable for motor control applications, including brushless DC motors (BLDC) and brushed DC motors, through its low on-resistance and high current handling capability, to ensure smooth and efficient motor operation.
3. **Battery Management System (BMS)**
- In electric vehicles and energy storage systems, 110N12N-VB can be used as a switching element in battery protection and management circuits, providing reliable current switching and protection functions to extend battery life.
4. **Industrial Automation**
- This device can be used as a relay replacement and load switch in industrial control systems, supporting high-frequency operation and low power consumption requirements, improving system reliability and response speed.
5. **Consumer Electronics**
- In consumer electronics products such as smartphones, tablets, and portable devices, 110N12N-VB can be used as a power switch and charging management, optimizing circuit design and providing a stable power management solution.
Through these application examples, it can be seen that 110N12N-VB MOSFET can provide excellent performance and reliability in a wide range of fields and is an indispensable component in many electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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