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110N12N-VB TO251 Product details
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### Product Introduction
**Model: 110N12N-VB TO251**
VBsemi's 110N12N-VB is a high-performance N-channel MOSFET designed with advanced trench technology, featuring low on-resistance and high current handling capability, making it ideal for a variety of high-efficiency power management and power conversion applications.
**Model: 110N12N-VB TO251**
VBsemi's 110N12N-VB is a high-performance N-channel MOSFET designed with advanced trench technology, featuring low on-resistance and high current handling capability, making it ideal for a variety of high-efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Parameter Description
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS = 10V
- **Drain current (ID)**: 65A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS = 10V
- **Drain current (ID)**: 65A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management**:
- **DC-DC Converter**: The low on-resistance and high current handling capability of the 110N12N-VB make it ideal for use in high-efficiency DC-DC converters, which can improve conversion efficiency and reduce heat loss.
- **Switching Power Supply (SMPS)**: In a switching power supply, this MOSFET can be used as the main switching device to provide high-efficiency power conversion, and is suitable for power supply in the fields of computers, communication equipment, etc.
2. **Electric Vehicle**:
- **Motor Drive**: The 110N12N-VB can be used in the motor controller of an electric vehicle as an efficient switching device to ensure smooth and efficient operation of the motor.
- **Battery Management System (BMS)**: This MOSFET can be used in a battery management system to help control the charge and discharge of the battery and improve the safety and life of the battery.
3. **Industrial Control**:
- **Motor Driver**: In industrial control systems, this MOSFET can be used in motor drivers to provide efficient power transmission and control, suitable for robots, CNC machine tools and other equipment.
- **Load Switch**: 110N12N-VB can be used as a load switch to ensure reliable operation of industrial equipment under high current conditions.
4. **Consumer Electronics**:
- **Smart Home Devices**: Suitable for power management modules in smart home devices, such as smart speakers, smart lighting systems, etc., to provide efficient and stable power control.
- **Portable Electronic Devices**: In portable electronic devices such as laptops and tablets, this MOSFET can be used in power management circuits to extend battery life and improve the overall performance of the device.
Through its excellent electrical performance and a wide range of applications, VBsemi's 110N12N-VB MOSFET provides reliable and efficient solutions for a variety of modern electronic and electrical systems.
1. **Power Management**:
- **DC-DC Converter**: The low on-resistance and high current handling capability of the 110N12N-VB make it ideal for use in high-efficiency DC-DC converters, which can improve conversion efficiency and reduce heat loss.
- **Switching Power Supply (SMPS)**: In a switching power supply, this MOSFET can be used as the main switching device to provide high-efficiency power conversion, and is suitable for power supply in the fields of computers, communication equipment, etc.
2. **Electric Vehicle**:
- **Motor Drive**: The 110N12N-VB can be used in the motor controller of an electric vehicle as an efficient switching device to ensure smooth and efficient operation of the motor.
- **Battery Management System (BMS)**: This MOSFET can be used in a battery management system to help control the charge and discharge of the battery and improve the safety and life of the battery.
3. **Industrial Control**:
- **Motor Driver**: In industrial control systems, this MOSFET can be used in motor drivers to provide efficient power transmission and control, suitable for robots, CNC machine tools and other equipment.
- **Load Switch**: 110N12N-VB can be used as a load switch to ensure reliable operation of industrial equipment under high current conditions.
4. **Consumer Electronics**:
- **Smart Home Devices**: Suitable for power management modules in smart home devices, such as smart speakers, smart lighting systems, etc., to provide efficient and stable power control.
- **Portable Electronic Devices**: In portable electronic devices such as laptops and tablets, this MOSFET can be used in power management circuits to extend battery life and improve the overall performance of the device.
Through its excellent electrical performance and a wide range of applications, VBsemi's 110N12N-VB MOSFET provides reliable and efficient solutions for a variety of modern electronic and electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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