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110N04UJ-VB Product details
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OK, here are the details of the 110N04UJ-VB model MOSFET:
### Product Introduction
The 110N04UJ-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for a variety of power control and conversion applications. The device has low on-resistance and high current handling capability, and can provide excellent performance in situations where high efficiency and high reliability are required.
### Product Introduction
The 110N04UJ-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for a variety of power control and conversion applications. The device has low on-resistance and high current handling capability, and can provide excellent performance in situations where high efficiency and high reliability are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 280A | 1.68mΩ | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 110N04UJ-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V\(_{DS}\))**: 40V
- **Maximum gate-source voltage (V\(_{GS}\))**: ±20V
- **Threshold voltage (V\(_{th}\))**: 3V
- **On-resistance (R\(_{DS(on)}\))**:
- 1.68mΩ @ V\(_{GS}\) = 4.5V
- 1.4mΩ @ V\(_{GS}\) = 10V
- **Maximum drain current (I\(_{D}\))**: 280A
- **Technology**: Trench
- **Model**: 110N04UJ-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V\(_{DS}\))**: 40V
- **Maximum gate-source voltage (V\(_{GS}\))**: ±20V
- **Threshold voltage (V\(_{th}\))**: 3V
- **On-resistance (R\(_{DS(on)}\))**:
- 1.68mΩ @ V\(_{GS}\) = 4.5V
- 1.4mΩ @ V\(_{GS}\) = 10V
- **Maximum drain current (I\(_{D}\))**: 280A
- **Technology**: Trench
Domain and module applications：
### Applications and modules
1. **Power management module**:
- In switch mode power supplies (SMPS), 110N04UJ-VB can be used for rectification and synchronous rectification on the primary and secondary sides, providing efficient power conversion.
- In DC-DC converters, this MOSFET can be used in boost and buck conversion circuits, ensuring high efficiency and low losses.
2. **Electric vehicles**:
- For motor controllers and battery management systems in electric vehicles, the high current handling capability of 110N04UJ-VB makes it suitable for use in high-power motor drives.
- In electric vehicle charging stations, it can be used in high-power charging modules to ensure a fast and efficient charging process.
3. **Industrial control**:
- Power switches that require high reliability and durability in industrial automation equipment, the low on-resistance and high current capability of 110N04UJ-VB are suitable for various motor drive and control circuits.
- In PLC and other control systems, this device can be used for power control and protection circuits to ensure stable operation of the system.
4. **Renewable Energy Systems**:
- In solar and wind energy conversion systems, 110N04UJ-VB can be used in inverters and charge and discharge control circuits to improve the energy efficiency and reliability of the system.
Through these detailed parameters and application field descriptions, I hope to help you better understand the characteristics and application scenarios of the 110N04UJ-VB model MOSFET. If you have any other questions, please feel free to let me know!
1. **Power management module**:
- In switch mode power supplies (SMPS), 110N04UJ-VB can be used for rectification and synchronous rectification on the primary and secondary sides, providing efficient power conversion.
- In DC-DC converters, this MOSFET can be used in boost and buck conversion circuits, ensuring high efficiency and low losses.
2. **Electric vehicles**:
- For motor controllers and battery management systems in electric vehicles, the high current handling capability of 110N04UJ-VB makes it suitable for use in high-power motor drives.
- In electric vehicle charging stations, it can be used in high-power charging modules to ensure a fast and efficient charging process.
3. **Industrial control**:
- Power switches that require high reliability and durability in industrial automation equipment, the low on-resistance and high current capability of 110N04UJ-VB are suitable for various motor drive and control circuits.
- In PLC and other control systems, this device can be used for power control and protection circuits to ensure stable operation of the system.
4. **Renewable Energy Systems**:
- In solar and wind energy conversion systems, 110N04UJ-VB can be used in inverters and charge and discharge control circuits to improve the energy efficiency and reliability of the system.
Through these detailed parameters and application field descriptions, I hope to help you better understand the characteristics and application scenarios of the 110N04UJ-VB model MOSFET. If you have any other questions, please feel free to let me know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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