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10WNMD2160-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 10WNMD2160-VB is a dual N-channel and dual P-channel MOSFET in a SOT23-6 package. It has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 0.5~1.5V. The on-resistance (RDS(ON)) of this MOSFET is 28mΩ (at VGS=2.5V) and 24mΩ (at VGS=4.5V), and the maximum drain current (ID) is 6A. It uses Trench technology and is suitable for various fields and modules.
VBsemi's 10WNMD2160-VB is a dual N-channel and dual P-channel MOSFET in a SOT23-6 package. It has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 0.5~1.5V. The on-resistance (RDS(ON)) of this MOSFET is 28mΩ (at VGS=2.5V) and 24mΩ (at VGS=4.5V), and the maximum drain current (ID) is 6A. It uses Trench technology and is suitable for various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### 2. Parameter Description
- Package: SOT23-6
- Configuration: Dual N-channel and Dual P-channel
- Drain-source voltage (VDS): 20V
- Gate-source voltage (VGS): 20V (±V)
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance (RDS(ON)): 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V
- Maximum drain current (ID): 6A
- Technology: Trench
Domain and module applications：
### 3. Application fields and modules
- **Mobile devices**: Due to its low drain-source voltage and moderate on-resistance, the 10WNMD2160-VB is suitable for power management and power control in mobile phones, tablets and other portable devices.
- **Power modules**: In various power modules, this MOSFET can be used for power switches and power regulators.
- **Automotive electronics**: In automotive electronic systems, this MOSFET can be used to control lights, electric windows and other electrical devices.
- **Industrial control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation and robot control.
These are some examples of fields and modules where the 10WNMD2160-VB can be applied, but in fact, it has potential uses in various low-voltage and low-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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