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10P6F6-VB TO220F Product details
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### 10P6F6-VB Product Introduction
10P6F6-VB is a high-performance single N-channel power MOSFET in a TO220F package. This MOSFET has a drain-source voltage (VDS) of 60V and is capable of operating in a low voltage environment. Its gate voltage (VGS) is ±20V, and its threshold voltage (Vth) is 1.7V, with good switching performance. The 10P6F6-VB has an on-resistance (RDS(ON)) of 27mΩ at VGS=10V and is capable of providing a continuous drain current (ID) of 45A, making it suitable for power electronics applications that require high efficiency and reliability. The device uses Trench technology to ensure its excellent performance and durability.
10P6F6-VB is a high-performance single N-channel power MOSFET in a TO220F package. This MOSFET has a drain-source voltage (VDS) of 60V and is capable of operating in a low voltage environment. Its gate voltage (VGS) is ±20V, and its threshold voltage (Vth) is 1.7V, with good switching performance. The 10P6F6-VB has an on-resistance (RDS(ON)) of 27mΩ at VGS=10V and is capable of providing a continuous drain current (ID) of 45A, making it suitable for power electronics applications that require high efficiency and reliability. The device uses Trench technology to ensure its excellent performance and durability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 10P6F6-VB Parameter Description
| Parameter Name| Value| Unit|
| ------------------ | ------------ | ------------- |
| Package Type| TO220F | - |
| Configuration| Single N-channel| - |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate Voltage (VGS) | 20 (±) | V |
| Threshold Voltage (Vth) | 1.7 | V |
| On-Resistance (RDS(ON)) | 27 | mΩ @ VGS=10V |
| Drain Current (ID) | 45 | A |
| Technology | Trench | - |
| Parameter Name| Value| Unit|
| ------------------ | ------------ | ------------- |
| Package Type| TO220F | - |
| Configuration| Single N-channel| - |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate Voltage (VGS) | 20 (±) | V |
| Threshold Voltage (Vth) | 1.7 | V |
| On-Resistance (RDS(ON)) | 27 | mΩ @ VGS=10V |
| Drain Current (ID) | 45 | A |
| Technology | Trench | - |
Domain and module applications：
### Application fields and module examples
1. **Power management**:
10P6F6-VB can be used as a switching element in low-voltage power management, such as mobile phone chargers, battery management systems, etc. Its low on-resistance and high drain current capability enable it to provide high-efficiency and reliable power conversion.
2. **Motor drive**:
In motor drives, such as electric vehicle drives, power tool drives, etc., 10P6F6-VB can be used to control the switching of the motor. Its high drain current handling capability and low on-resistance can ensure that the motor system provides high-efficiency and reliable power output.
3. **Lighting system**:
This MOSFET is suitable for power switching circuits in LED lighting systems. Its high efficiency and reliability enable it to provide stable power output in LED lighting systems to ensure lighting effects.
4. **Battery protection**:
10P6F6-VB can be used as a switching element in battery protection systems. Its high drain current and low on-resistance can ensure effective protection of the battery in abnormal conditions such as overcharge and over-discharge.
Through the above application examples, 10P6F6-VB demonstrates its versatility and high performance in multiple fields, and is one of the indispensable components in power electronics design.
1. **Power management**:
10P6F6-VB can be used as a switching element in low-voltage power management, such as mobile phone chargers, battery management systems, etc. Its low on-resistance and high drain current capability enable it to provide high-efficiency and reliable power conversion.
2. **Motor drive**:
In motor drives, such as electric vehicle drives, power tool drives, etc., 10P6F6-VB can be used to control the switching of the motor. Its high drain current handling capability and low on-resistance can ensure that the motor system provides high-efficiency and reliable power output.
3. **Lighting system**:
This MOSFET is suitable for power switching circuits in LED lighting systems. Its high efficiency and reliability enable it to provide stable power output in LED lighting systems to ensure lighting effects.
4. **Battery protection**:
10P6F6-VB can be used as a switching element in battery protection systems. Its high drain current and low on-resistance can ensure effective protection of the battery in abnormal conditions such as overcharge and over-discharge.
Through the above application examples, 10P6F6-VB demonstrates its versatility and high performance in multiple fields, and is one of the indispensable components in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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