中文
English
10P03L-VB TO251 Product details
Back to previous pageProduct introduction：
The following is a detailed introduction to the 10P03L-VB TO251 product:
### Product Introduction:
10P03L-VB is a single P-channel MOSFET manufactured using Trench technology, with a drain-source voltage (VDS) of -30V and a threshold voltage (Vth) of -1.7V when VGS is 20V (±). It has the characteristics of low on-resistance (RDS(ON)=72mΩ@VGS=4.5V, 56mΩ@VGS=10V) and high drain current (ID=-20A), suitable for a variety of fields and modules.
### Product Introduction:
10P03L-VB is a single P-channel MOSFET manufactured using Trench technology, with a drain-source voltage (VDS) of -30V and a threshold voltage (Vth) of -1.7V when VGS is 20V (±). It has the characteristics of low on-resistance (RDS(ON)=72mΩ@VGS=4.5V, 56mΩ@VGS=10V) and high drain current (ID=-20A), suitable for a variety of fields and modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | 72mΩ | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel |
### Parameter Description:
- **Package Type (Package)**: TO251
- **Device Type (Configuration)**: Single P-channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: 20V (±)
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**: 72mΩ @ VGS=4.5V, 56mΩ @ VGS=10V
- **Drain Current (ID)**: -20A
- **Technology (Technology)**: Trench
Domain and module applications：
### Application fields and module examples:
1. **Power management**: Due to its high drain-source voltage and drain current capability, 10P03L-VB is suitable for use in load switching and power management.
2. **Battery protection**: In the rechargeable battery protection circuit, it can be used as a switching device to protect the battery from overcharge or over-discharge.
3. **Automotive electronics**: In automotive electronic systems, such as engine control units (ECUs) and lighting controls, it can be used as a power switching device to provide efficient power control.
4. **LED driver**: In LED lighting drivers, 10P03L-VB can be used as a power MOSFET to provide efficient power control.
The above is an introduction to the 10P03L-VB TO251 product, parameter descriptions, and example descriptions of application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
