中文
English
10NM60N-VB TO251 Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 10NM60N-VB is a single N-channel MOSFET in a TO251 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ (at VGS=10V) and the maximum drain current (ID) is 9A. It uses SJ_Multi-EPI technology and is suitable for various fields and modules.
VBsemi's 10NM60N-VB is a single N-channel MOSFET in a TO251 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ (at VGS=10V) and the maximum drain current (ID) is 9A. It uses SJ_Multi-EPI technology and is suitable for various fields and modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### 2. Parameter Description
- Package: TO251
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 500mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
- Package: TO251
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 500mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and modules
- **Power supply**: Due to its high drain-source voltage and moderate on-resistance, the 10NM60N-VB is suitable for high-voltage switching power supplies and inverters.
- **Electric vehicles**: In the power transmission and control system of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
- **Industrial control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation and robot control.
- **Lighting**: Due to its high voltage and moderate on-resistance characteristics, it can be used in LED lighting drivers and power supplies.
These are some examples of fields and modules where the 10NM60N-VB can be applied, but in fact, it has potential uses in various high-voltage applications.
- **Power supply**: Due to its high drain-source voltage and moderate on-resistance, the 10NM60N-VB is suitable for high-voltage switching power supplies and inverters.
- **Electric vehicles**: In the power transmission and control system of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
- **Industrial control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation and robot control.
- **Lighting**: Due to its high voltage and moderate on-resistance characteristics, it can be used in LED lighting drivers and power supplies.
These are some examples of fields and modules where the 10NM60N-VB can be applied, but in fact, it has potential uses in various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
