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10NM50N-VB TO252 Product details
Back to previous pageProduct introduction：
### Product Introduction:
10NM50N-VB is a single-channel N-type MOSFET manufactured using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, and a maximum drain current (ID) of 9A. This product uses a TO252 package.
10NM50N-VB is a single-channel N-type MOSFET manufactured using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, and a maximum drain current (ID) of 9A. This product uses a TO252 package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description:
- **Package Size**: TO252
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: 30V (±)
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package Size**: TO252
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: 30V (±)
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples:
1. **Power Module**: 10NM50N-VB can be used as a power switch in a switching power module.
2. **Electric Vehicle Charging Station**: Can be used as a power switch in an electric vehicle charging station.
3. **Solar Inverter**: Used as a key power switch component in a solar inverter.
4. **Motor Drive**: Used as a power switch in an industrial motor drive.
5. **Power Management**: Suitable for a variety of power management applications requiring high voltage and high current switching.
These examples highlight the wide range of applications for the 10NM50N-VB in areas such as energy conversion, power management, and motor control.
1. **Power Module**: 10NM50N-VB can be used as a power switch in a switching power module.
2. **Electric Vehicle Charging Station**: Can be used as a power switch in an electric vehicle charging station.
3. **Solar Inverter**: Used as a key power switch component in a solar inverter.
4. **Motor Drive**: Used as a power switch in an industrial motor drive.
5. **Power Management**: Suitable for a variety of power management applications requiring high voltage and high current switching.
These examples highlight the wide range of applications for the 10NM50N-VB in areas such as energy conversion, power management, and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
