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10NM50N-VB TO220F Product details
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The following is a detailed introduction to the 10NM50N-VB TO220F product:
### Product Introduction:
The 10NM50N-VB is a single N-channel MOSFET manufactured using Plannar technology with a drain-source voltage (VDS) of up to 650V and a threshold voltage (Vth) of 3.5V at a VGS of 30V (±). It has the characteristics of low on-resistance (RDS(ON)=680mΩ@VGS=10V) and high drain current (ID=12A), suitable for a variety of fields and modules.
### Product Introduction:
The 10NM50N-VB is a single N-channel MOSFET manufactured using Plannar technology with a drain-source voltage (VDS) of up to 650V and a threshold voltage (Vth) of 3.5V at a VGS of 30V (±). It has the characteristics of low on-resistance (RDS(ON)=680mΩ@VGS=10V) and high drain current (ID=12A), suitable for a variety of fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description:
- **Package Type (Package)**: TO220F
- **Device Type (Configuration)**: Single N-channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: 30V (±)
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain Current (ID)**: 12A
- **Technology (Technology)**: Plannar
- **Package Type (Package)**: TO220F
- **Device Type (Configuration)**: Single N-channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: 30V (±)
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain Current (ID)**: 12A
- **Technology (Technology)**: Plannar
Domain and module applications：
### Application fields and module examples:
1. **Power module**: Due to its high drain-source voltage and drain current capability, 10NM50N-VB is suitable for the high-voltage side of the switching power module.
2. **Electric vehicle charger**: In electric vehicle chargers, 10NM50N-VB can be used as a power MOSFET to provide efficient energy conversion.
3. **Industrial motor drive**: Used as a power switch in industrial motor drives to achieve high-efficiency working performance.
4. **Power transmission equipment**: In power transmission equipment, it can be used as a switching device to ensure efficient energy conversion and transmission.
The above is an introduction to the 10NM50N-VB TO220F product, parameter description, and example description of application fields and modules.
1. **Power module**: Due to its high drain-source voltage and drain current capability, 10NM50N-VB is suitable for the high-voltage side of the switching power module.
2. **Electric vehicle charger**: In electric vehicle chargers, 10NM50N-VB can be used as a power MOSFET to provide efficient energy conversion.
3. **Industrial motor drive**: Used as a power switch in industrial motor drives to achieve high-efficiency working performance.
4. **Power transmission equipment**: In power transmission equipment, it can be used as a switching device to ensure efficient energy conversion and transmission.
The above is an introduction to the 10NM50N-VB TO220F product, parameter description, and example description of application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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