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10N90L-T47-T-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 10N90L-T47-T-VB is a single N-channel MOSFET in a TO247 package. It has a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 750mΩ (at VGS=10V) and the maximum drain current (ID) is 9A. It uses SJ_Multi-EPI technology and is suitable for various fields and modules.
VBsemi's 10N90L-T47-T-VB is a single N-channel MOSFET in a TO247 package. It has a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 750mΩ (at VGS=10V) and the maximum drain current (ID) is 9A. It uses SJ_Multi-EPI technology and is suitable for various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### 2. Parameter Description
- Package: TO247
- Configuration: Single N-channel
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 750mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
- Package: TO247
- Configuration: Single N-channel
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 750mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and modules
- **Power supply**: Due to its high drain-source voltage and moderate on-resistance, the 10N90L-T47-T-VB is suitable for high-voltage switching power supplies and inverters.
- **Industrial control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation, and robot control.
- **Solar inverter**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power.
- **Electric vehicle**: In the power transmission and control system of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
These are some examples of fields and modules where the 10N90L-T47-T-VB can be applied, but in fact, it has potential uses in various high-voltage applications.
- **Power supply**: Due to its high drain-source voltage and moderate on-resistance, the 10N90L-T47-T-VB is suitable for high-voltage switching power supplies and inverters.
- **Industrial control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation, and robot control.
- **Solar inverter**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power.
- **Electric vehicle**: In the power transmission and control system of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
These are some examples of fields and modules where the 10N90L-T47-T-VB can be applied, but in fact, it has potential uses in various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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