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10N80L-TF2-T-VB Product details
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### 10N80L-TF2-T-VB Product Introduction
10N80L-TF2-T-VB is a high-performance single N-channel power MOSFET in TO220F package. This MOSFET has a drain-source voltage (VDS) of 800V and can withstand operation in high-voltage environments. Its gate voltage (VGS) is ±30V, and its threshold voltage (Vth) is 3.5V, with good switching performance. The 10N80L-TF2-T-VB has an on-resistance (RDS(ON)) of 770mΩ at VGS=10V, and can provide a continuous drain current (ID) of 7A, which is suitable for a variety of power electronics applications that require high efficiency and reliability. The device adopts SJ_Multi-EPI technology to ensure its excellent performance and durability.
10N80L-TF2-T-VB is a high-performance single N-channel power MOSFET in TO220F package. This MOSFET has a drain-source voltage (VDS) of 800V and can withstand operation in high-voltage environments. Its gate voltage (VGS) is ±30V, and its threshold voltage (Vth) is 3.5V, with good switching performance. The 10N80L-TF2-T-VB has an on-resistance (RDS(ON)) of 770mΩ at VGS=10V, and can provide a continuous drain current (ID) of 7A, which is suitable for a variety of power electronics applications that require high efficiency and reliability. The device adopts SJ_Multi-EPI technology to ensure its excellent performance and durability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 10N80L-TF2-T-VB Parameter Description
| Parameter Name| Value| Unit|
| ------------------ | ------------ | ------------- |
| Package Type| TO220F | - |
| Configuration| Single N-channel| - |
| Drain-Source Voltage (VDS) | 800 | V |
| Gate Voltage (VGS) | 30 (±) | V |
| Threshold Voltage (Vth) | 3.5 | V |
| On-Resistance (RDS(ON)) | 770 | mΩ @ VGS=10V |
| Drain Current (ID) | 7 | A |
| Technology| SJ_Multi-EPI | - |
| Parameter Name| Value| Unit|
| ------------------ | ------------ | ------------- |
| Package Type| TO220F | - |
| Configuration| Single N-channel| - |
| Drain-Source Voltage (VDS) | 800 | V |
| Gate Voltage (VGS) | 30 (±) | V |
| Threshold Voltage (Vth) | 3.5 | V |
| On-Resistance (RDS(ON)) | 770 | mΩ @ VGS=10V |
| Drain Current (ID) | 7 | A |
| Technology| SJ_Multi-EPI | - |
Domain and module applications：
### Applications and module examples
1. **Electric vehicle charging pile**:
10N80L-TF2-T-VB can be used as a power switch element in electric vehicle charging piles. Its high withstand voltage and low on-resistance characteristics enable it to provide reliable performance in high-power charging piles, ensuring a fast and efficient charging process.
2. **Solar inverter**:
This MOSFET is suitable for power switching circuits in solar inverters. Its high performance and reliability enable it to effectively convert solar energy into electrical energy and improve the energy utilization of solar energy systems.
3. **Industrial power supply**:
In industrial power supply equipment, 10N80L-TF2-T-VB can be used to drive high-power loads and stabilize output voltage. Its high current handling capability and low on-resistance can meet the requirements of industrial equipment for high performance and reliability.
Through the above application examples, 10N80L-TF2-T-VB demonstrates its versatility and high performance in multiple fields, and is one of the indispensable components in power electronics design.
1. **Electric vehicle charging pile**:
10N80L-TF2-T-VB can be used as a power switch element in electric vehicle charging piles. Its high withstand voltage and low on-resistance characteristics enable it to provide reliable performance in high-power charging piles, ensuring a fast and efficient charging process.
2. **Solar inverter**:
This MOSFET is suitable for power switching circuits in solar inverters. Its high performance and reliability enable it to effectively convert solar energy into electrical energy and improve the energy utilization of solar energy systems.
3. **Industrial power supply**:
In industrial power supply equipment, 10N80L-TF2-T-VB can be used to drive high-power loads and stabilize output voltage. Its high current handling capability and low on-resistance can meet the requirements of industrial equipment for high performance and reliability.
Through the above application examples, 10N80L-TF2-T-VB demonstrates its versatility and high performance in multiple fields, and is one of the indispensable components in power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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