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10N80L-TF1-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**10N80L-TF1-T-VB MOSFET** is a single N-channel MOSFET in TO220F package. The device has a drain-source voltage (VDS) of 800V and operates at a gate-source voltage (VGS) of plus or minus 30V. The threshold voltage (Vth) is 3.5V, the drain-source on-resistance (RDS(ON)) is 770mΩ (at VGS=10V), and the drain current (ID) is 7A. Manufactured using SJ_Multi-EPI technology, it is suitable for various fields and modules.
**10N80L-TF1-T-VB MOSFET** is a single N-channel MOSFET in TO220F package. The device has a drain-source voltage (VDS) of 800V and operates at a gate-source voltage (VGS) of plus or minus 30V. The threshold voltage (Vth) is 3.5V, the drain-source on-resistance (RDS(ON)) is 770mΩ (at VGS=10V), and the drain current (ID) is 7A. Manufactured using SJ_Multi-EPI technology, it is suitable for various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Package Type:** TO220F
- **Device Type:** Single N-Channel
- **VDS (Drain-Source Voltage):** 800V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (Drain-Source On-Resistance):** 770mΩ @ VGS=10V
- **ID (Drain Current):** 7A
- **Technology:** SJ_Multi-EPI
- **Package Type:** TO220F
- **Device Type:** Single N-Channel
- **VDS (Drain-Source Voltage):** 800V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Threshold Voltage):** 3.5V
- **RDS(ON) (Drain-Source On-Resistance):** 770mΩ @ VGS=10V
- **ID (Drain Current):** 7A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
1. **Power supply module:** 10N80L-TF1-T-VB can be used as a switching power supply module in industrial power supply systems to provide efficient power conversion and stable power supply.
2. **Electric vehicle charging pile:** Applicable to the switching power supply module in the electric vehicle charging pile to realize the control and management of the charging process.
3. **Solar inverter:** In the DC-AC converter module in the solar inverter, it can be used to improve the energy conversion efficiency.
4. **Power transmission:** It can be used as a switching power supply module in the high-voltage DC transmission system to achieve efficient power transmission and distribution.
5. **Industrial automation:** Applicable to the switching power supply module in the industrial control system to achieve efficient control and operation of factory equipment.
The above is the product introduction, parameter description and application examples of 10N80L-TF1-T-VB MOSFET in various fields and modules.
1. **Power supply module:** 10N80L-TF1-T-VB can be used as a switching power supply module in industrial power supply systems to provide efficient power conversion and stable power supply.
2. **Electric vehicle charging pile:** Applicable to the switching power supply module in the electric vehicle charging pile to realize the control and management of the charging process.
3. **Solar inverter:** In the DC-AC converter module in the solar inverter, it can be used to improve the energy conversion efficiency.
4. **Power transmission:** It can be used as a switching power supply module in the high-voltage DC transmission system to achieve efficient power transmission and distribution.
5. **Industrial automation:** Applicable to the switching power supply module in the industrial control system to achieve efficient control and operation of factory equipment.
The above is the product introduction, parameter description and application examples of 10N80L-TF1-T-VB MOSFET in various fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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