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10N80H-VB TO3P Product details
Back to previous pageProduct introduction：
**10N80H-VB Product Introduction: **
10N80H-VB is a single N-channel MOSFET packaged in TO3P. It has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) rated at ±30V. The gate threshold voltage (Vth) is 3.5V, the drain-source resistance (RDS(ON)) is 500mΩ at VGS=10V, and the drain current (ID) is rated at 11A. This MOSFET is manufactured using SJ_Multi-EPI technology.
10N80H-VB is a single N-channel MOSFET packaged in TO3P. It has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) rated at ±30V. The gate threshold voltage (Vth) is 3.5V, the drain-source resistance (RDS(ON)) is 500mΩ at VGS=10V, and the drain current (ID) is rated at 11A. This MOSFET is manufactured using SJ_Multi-EPI technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
*10N80H-VB Detailed parameter description: **
- **Package type (Package): ** TO3P
- **Device type (Configuration): ** Single N-channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **Drain-source resistance (RDS(ON)): ** 500mΩ @ VGS=10V
- **Drain current (ID): ** 11A
- **Technology (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO3P
- **Device type (Configuration): ** Single N-channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **Drain-source resistance (RDS(ON)): ** 500mΩ @ VGS=10V
- **Drain current (ID): ** 11A
- **Technology (Technology): ** SJ_Multi-EPI
Domain and module applications：
**10N80H-VB application areas and module examples:**
1. **Power module:** Due to its high drain-source voltage and low drain-source resistance, 10N80H-VB can be widely used in power switch modules, such as switching power supplies, inverters and regulators.
2. **Electric vehicle charging pile:** Due to its high drain-source voltage and high drain current capability, 10N80H-VB can be used in switching power supply modules in electric vehicle charging piles to achieve fast charging and efficient energy conversion.
3. **Industrial control system:** In industrial automation and control systems, 10N80H-VB can be used as a switching device in motor control modules to achieve efficient motor control.
4. **Power Inverter:** Due to its high drain-source voltage and low on-resistance, 10N80H-VB can be used in solar inverters and wind inverters to achieve efficient energy conversion.
The above is the product introduction, detailed parameter description, applicable fields and module examples of 10N80H-VB.
1. **Power module:** Due to its high drain-source voltage and low drain-source resistance, 10N80H-VB can be widely used in power switch modules, such as switching power supplies, inverters and regulators.
2. **Electric vehicle charging pile:** Due to its high drain-source voltage and high drain current capability, 10N80H-VB can be used in switching power supply modules in electric vehicle charging piles to achieve fast charging and efficient energy conversion.
3. **Industrial control system:** In industrial automation and control systems, 10N80H-VB can be used as a switching device in motor control modules to achieve efficient motor control.
4. **Power Inverter:** Due to its high drain-source voltage and low on-resistance, 10N80H-VB can be used in solar inverters and wind inverters to achieve efficient energy conversion.
The above is the product introduction, detailed parameter description, applicable fields and module examples of 10N80H-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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