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10N65K3-VB TO220F Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 10N65K3-VB is a single N-channel MOSFET in a TO220F package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ (at VGS=10V) and the maximum drain current (ID) is 10A. It uses Plannar technology and is suitable for various fields and modules.
VBsemi's 10N65K3-VB is a single N-channel MOSFET in a TO220F package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ (at VGS=10V) and the maximum drain current (ID) is 10A. It uses Plannar technology and is suitable for various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Parameter Description
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 830mΩ @ VGS=10V
- Maximum drain current (ID): 10A
- Technology: Plannar
- Package: TO220F
- Configuration: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 830mΩ @ VGS=10V
- Maximum drain current (ID): 10A
- Technology: Plannar
Domain and module applications：
### 3. Applications and Modules
- **Power Supply**: The high drain-source voltage and low on-resistance of the 10N65K3-VB make it ideal for use in switching power supplies and inverters.
- **Electric Vehicle**: In the power transmission and control systems of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
- **Industrial Control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation, and robotic control.
- **Lighting**: Due to its high voltage and high current characteristics, it can be used in LED lighting drivers and power supplies.
- **Solar Inverter**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power.
These are some examples of the areas and modules where the 10N65K3-VB can be used, but in fact, it has potential uses in a variety of high-voltage applications.
- **Power Supply**: The high drain-source voltage and low on-resistance of the 10N65K3-VB make it ideal for use in switching power supplies and inverters.
- **Electric Vehicle**: In the power transmission and control systems of electric vehicles, this MOSFET can be used to control motors and other high-voltage devices.
- **Industrial Control**: It can be used in various industrial control applications such as PLC (Programmable Logic Controller), industrial automation, and robotic control.
- **Lighting**: Due to its high voltage and high current characteristics, it can be used in LED lighting drivers and power supplies.
- **Solar Inverter**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power.
These are some examples of the areas and modules where the 10N65K3-VB can be used, but in fact, it has potential uses in a variety of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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